PD - 94319B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
Radiation Level R
DS(on)
I
D
IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A
IRHY593230CM 300K Rads (Si)
0.515Ω -8.0A
IRHY597230CM
200V, P-CHANNEL
4
#
TECHNOLOGY
c
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
T0-257AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-8.0
-5.0
-32
75
0.6
±20
80
-8.0
7.5
-12
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
For footnotes refer to the last page
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1
01/30/03
IRHY597230CM
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
—
-2.0
5.1
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.515
-4.0
—
-10
-25
-100
100
40
12
15
25
30
50
105
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -5.0A
➃
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -5.0A
➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -8.0A
VDS = -100V
VDD = -100V, ID = -8.0A,
VGS =-12V, RG = 7.5Ω,
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1340
190
20
—
—
—
pF
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-8.0
-32
-5.0
200
1.2
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -8.0A, VGS = 0V
➃
Tj = 25°C, IF =-8.0A, di/dt
≤
-100A/µs
VDD
≤
-25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
1.67
80
Units
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY597230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (TO-257AA)
Diode Forward Voltage
➃
100K Rads(Si)
1
Min
Max
-200
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.505
0.515
-5.0
300KRads(Si)
2
Min
Max
-200
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-10
0.505
0.515
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
=-160V, V
GS
=0V
V
GS
= -12V, I
D
=-5.0A
V
GS
= -12V, I
D
=-5.0A
V
GS
= 0V, IS = -8.0A
1. Part number IRHY597230CM
2. Part number IRHY593230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.3
59.9
82.3
Energy
(MeV)
285
345
357
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 200
- 200
- 200
- 200
-75
32.7
- 200
- 200
- 200
- 50
—
28.5
- 200
- 200
- 200
- 35
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY597230CM
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
10
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
-5.0V
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-5.0V
1
1
0.1
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -8A
-I
D
, Drain-to-Source Current (A)
2.0
1.5
T
J
= 25
°
C
T
J
= 150
°
C
1.0
0.5
10
5.0
15
V DS = -50V
20µs PULSE WIDTH
8.0
9.0
6.0
7.0
10.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY597230CM
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -8.0A
V
DS
=-100V
16
C, Capacitance (pF)
Ciss
1200
12
800
8
C
oss
400
4
C
rss
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-I
SD
, Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
10
10
T
J
= 150
°
C
T
J
= 25
°
C
1
100µs
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1ms
1
0ms
0.1
1.0
V
GS
= 0 V
2.0
3.0
4.0
5.0
6.0
-V
SD
,Source-to-Drain Voltage (V)
1000
-V DS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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