PD - 93829A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ7330SE 100K Rads (Si)
IRHNJ7330SE
JANSR2N7465U3
400V, N-CHANNEL
REF: MIL-PRF-19500/676
RAD Hard HEXFET
TECHNOLOGY
™
®
R
DS(on)
I
D
QPL Part Number
1.2Ω
5.3A JANSR2N7465U3
SMD-0.5
International Rectifier’s RADHard
TM
HEXFET
®
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
5.3
3.4
21
75
0.6
±20
150
5.3
7.5
1.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0(Typical)
g
www.irf.com
1
4/19/01
IRHNJ7330SE, JANSR2N7465U3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
400
—
—
2.5
1.3
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.48
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
1.2
4.5
—
50
250
100
-100
41
7.0
20
25
75
58
58
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 3.4A
➃
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 3.4A
➃
VDS= 320V ,VGS=0V
VDS = 320V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 5.3A
VDS = 200V
VDD = 200V, ID = 5.3A,
VGS =12V, VRG = 7.5Ω
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
600
165
60
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
5.3
21
1.2
516
3.8
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 5.2A, VGS = 0V
➃
Tj = 25°C, IF = 5.2A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.9
1.67
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ7330SE, JANSR2N7465U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
100K Rads (Si)
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=320V, V
GS
=0V
V
GS
= 12V, I
D
= 3.4A
V
GS
= 12V, I
D
= 3.4A
V
GS
= 0V, I
D
= 5.3A
Min
400
2.0
—
—
—
—
—
—
Max
—
4.5
100
-100
50
1.22
1.2
1.2
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
V
DS
(V)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V
325
325
325
325
325
325
325
275
350
300
250
VDS
200
150
100
50
0
0
-5
-10
VGS
-15
-20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ7330SE, JANSR2N7465U3
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1
0.1
1
5.0V
0.01
5.0V
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
0.001
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.1
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.3A
I
D
, Drain-to-Source Current (A)
2.5
10
T
J
= 150
°
C
2.0
1
1.5
T
J
= 25
°
C
0.1
1.0
0.5
0.01
5
7
9
15
V DS = 50V
20µs PULSE WIDTH
11
13
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHNJ7330SE, JANSR2N7465U3
1200
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
900
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 5.3A
16
V
DS
= 320V
V
DS
= 200V
V
DS
= 80V
600
Ciss
12
8
300
C
oss
C
rss
4
0
1
10
100
0
0
10
FOR TEST CIRCUIT
SEE FIGURE 13
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
10
T
J
= 150
°
C
10
10us
100us
1
1
T
J
= 25
°
C
1ms
0.1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
