PD - 90679G
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number
IRHN7250
IRHN3250
IRHN4250
IRHN8250
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.1Ω
0.1Ω
0.1Ω
0.1Ω
I
D
26A
26A
26A
26A
IRHN7250
JANSR2N7269U
200V, N-CHANNEL
REF:MIL-PRF-19500/603
RAD-Hard HEXFET
TECHNOLOGY
™
®
QPL Part Number
JANSR2N7269U
JANSF2N7269U
JANSG2N7269U
JANSH2N7269U
SMD-1
International Rectifier’s RAD-Hard
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rds(on)
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TM
HEXFET
®
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5 sec)
2.6 (Typical)
g
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1
05/15/06
IRHN7250, JANSR2N7269U
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
—
2.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.10
0.11
4.0
—
25
250
100
-100
170
30
60
33
140
140
140
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =16A
Ã
VGS = 12V, ID = 26A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A
Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =26A
VDS = 100V
VDD = 100V, ID =26A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4700
850
210
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 26A, VGS = 0V
Ã
Tj = 25°C, IF = 26A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.6
0.83
—
°C/W
Test Conditions
Soldered to a 1 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHN7250, JANSR2N7269U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-1)
Diode Forward Voltage
Ã
100 K Rads(Si)
1
300K - 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=160V, V
GS
=0V
V
GS
= 12V, I
D
=16A
V
GS
= 12V, I
D
=16A
V
GS
= 0V, IS = 26A
Min
200
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
0.100
0.100
1.4
Min
200
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.155
0.155
1.4
1. Part number IRHN7250 (JANSR2N7269U)
2. Part numbers IRHN3250 (JANSF2N7269U), IRHN4250 (JANSG2N7269U) and IRHN8250 (JANSH2N7269U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
43
190
180
170
125
—
39
100
100
100
50
—
200
150
VDS
100
50
0
0
-5
-10
VGS
-15
-20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHN7250, JANSR2N7269U
Post-Irradiation
Pre-Irradiation
Fig 1.
Typical Response of Gate Threshhold
Fig 2.
Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 3.
Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
Pre-Irradiation
IRHN7250, JANSR2N7269U
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a.
Gate Stress of
V
GSS
Equals 12 Volts During
Radiation
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During 1x10
12
Rad (Si)/Sec Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
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