AP2304GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small package outline
▼
Surface mount package
▼
RoHS Compliant & Halogen-Free
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
25V
117mΩ
2.7A
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 10V
Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
25
+20
2.7
2.2
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
Data and specifications subject to change without notice
1
201501056
AP2304GN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
o
Min.
25
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.4
-
-
-
5.9
0.8
2.1
4.5
11.5
12
3
110
85
39
Max. Units
-
117
190
3
-
1
10
+100
10
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=4.5V, I
D
=2.5A
V
DS
=25V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=2.5A
V
DS
=15V
V
GS
=10V
V
DS
=15V
I
D
=1A
R
G
=6Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Drain-Source Leakage Current (T
j
=55 C)
V
DS
=20V ,V
GS
=0V
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
I
S
=1.25A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
1
10
1.2
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2304GN-HF
10
10
V
GS
=10V - 5V
8
T
A
=25
o
C
8
T
A
=150
o
C
V
GS
=10V - 5V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
6
6
V
GS
=4V
4
V
GS
=4V
4
2
2
V
GS
=3V
0
0
V
GS
=3V
10
0
2
4
6
8
10
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
1.8
600
R
DS(ON)
(m
Ω
)
500
Normalized R
DS(ON)
I
D
=2A
T
A
=25
℃
1.6
V
GS
=10V
I
D
=2.5A
1.4
400
1.2
300
1.0
200
100
0.8
0
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.25
10
2.05
1
V
GS(th)
(V)
I
F
(A)
1.85
T
j
=150
o
C
T
j
=25
o
C
1.65
0
0.1
0.5
0.9
1.3
1.45
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2304GN-HF
10
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
V
DS
=15V
I
D
=2.5A
6
C (pF)
100
C
iss
C
oss
C
rss
4
2
0
0
1
2
3
4
5
6
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
I
D
(A)
1ms
1
0.05
P
DM
t
0.01
10ms
0
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270℃/W
0.01
Single Pulse
100ms
T
A
=25 C
Single Pulse
o
1s
DC
1
10
100
0
0.001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP2304GN-HF
MARKING INFORMATION
Part Number : N4
N4SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
5
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