OTP ROM, 64KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | DIP |
| 包装说明 | 0.600 INCH, PLASTIC, DIP-28 |
| 针数 | 28 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 120 ns |
| JESD-30 代码 | R-PDIP-T28 |
| JESD-609代码 | e0 |
| 长度 | 36.576 mm |
| 内存密度 | 524288 bit |
| 内存集成电路类型 | OTP ROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 64KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.699 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 15.24 mm |
| IS27C512-12WI | IS27C512-15WI | IS27C512-90WI | IS27C512-90CW | IS27C512-90CWI | IS27C512-15CW | IS27C512-15CWI | IS27C512-12CW | IS27C512-12CWI | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | OTP ROM, 64KX8, 120ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | OTP ROM, 64KX8, 150ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | OTP ROM, 64KX8, 90ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | UVPROM, 64KX8, 90ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 90ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 150ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 150ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | UVPROM, 64KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, PLASTIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERAMIC, DIP-28 |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 120 ns | 150 ns | 90 ns | 90 ns | 90 ns | 150 ns | 150 ns | 120 ns | 120 ns |
| JESD-30 代码 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit |
| 内存集成电路类型 | OTP ROM | OTP ROM | OTP ROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | - | -40 °C | - | -40 °C | - | -40 °C |
| 组织 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
