74LVC1GU04
Inverter
Rev. 08 — 12 June 2007
Product data sheet
1. General description
The 74LVC1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of
this device in a mixed 3.3 V and 5 V environment.
The 74LVC1GU04 provides the inverting single state unbuffered function.
2. Features
I
I
I
I
I
I
I
I
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
±24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Input accepts voltages up to 5 V
Multiple package options
ESD protection:
N
HBM JESD22-A114-D exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC1GU04GW
74LVC1GU04GV
74LVC1GU04GM
74LVC1GU04GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
Name
TSSOP5
SC-74A
XSON6
XSON6
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1
×
0.5 mm
Version
SOT353-1
SOT753
SOT886
SOT891
Type number
NXP Semiconductors
74LVC1GU04
Inverter
4. Marking
Table 2.
Marking codes
Marking
VD
VU4
VD
VD
Type number
74LVC1GU04GW
74LVC1GU04GV
74LVC1GU04GM
74LVC1GU04GF
5. Functional diagram
V
CC
V
CC
100
Ω
A
2
A
Y
4
2
1
4
Y
mna108
mna109
mna636
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
74LVC1GU04
74LVC1GU04
n.c.
A
1
2
GND
GND
3
001aab666
n.c.
5
V
CC
1
6
V
CC
n.c.
A
74LVC1GU04
1
2
3
6
5
4
V
CC
n.c.
Y
A
2
5
n.c.
3
4
Y
GND
4
Y
001aab667
001aaf411
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT353-1
and SOT753
Fig 5. Pin configuration SOT886
Fig 6. Pin configuration SOT891
74LVC1GU04_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 12 June 2007
2 of 15
NXP Semiconductors
74LVC1GU04
Inverter
6.2 Pin description
Table 3.
Symbol
n.c.
A
GND
Y
n.c.
V
CC
Pin description
Pin
SOT353-1/SOT753
1
2
3
4
-
5
SOT886/SOT891
1
2
3
4
5
6
not connected
data input A
ground (0 V)
data output Y
not connected
supply voltage
Description
7. Functional description
Table 4.
Input (A)
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Output (Y)
H
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
P
tot
T
stg
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
total power dissipation
storage temperature
Conditions
V
I
< 0 V
[1]
Min
−0.5
-
−0.5
-
[1][2]
Max
+6.5
−50
+6.5
±50
V
CC
+ 0.5
±50
+100
−100
250
+150
Unit
V
mA
V
mA
V
mA
mA
mA
mW
°C
V
O
> V
CC
or V
O
< 0 V
Active mode
V
O
= 0 V to V
CC
−0.5
-
-
-
T
amb
=
−40 °C
to +125
°C
[3]
-
−65
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For TSSOP5 and SC-74A packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
74LVC1GU04_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 12 June 2007
3 of 15
NXP Semiconductors
74LVC1GU04
Inverter
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Active mode
Conditions
Min
1.65
0
0
−40
0
0
Typ
-
-
-
-
-
-
Max
5.5
5.5
V
CC
+125
20
10
Unit
V
V
V
°C
ns/V
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
V
CC
= 1.65 V to 5.5 V
V
CC
= 1.65 V to 5.5 V
I
O
=
−100 µA;
V
CC
= 1.65 V to 5.5 V
I
O
=
−4
mA; V
CC
= 1.65 V
I
O
=
−8
mA; V
CC
= 2.3 V
I
O
=
−12
mA; V
CC
= 2.7 V
I
O
=
−24
mA; V
CC
= 3.0 V
I
O
=
−32
mA; V
CC
= 4.5 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 100
µA;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
CC
C
I
input leakage current
supply current
input capacitance
V
I
= 5.5 V or GND; V
CC
= 0 V to
5.5 V
V
I
= 5.5 V or GND; I
O
= 0 A;
V
CC
= 1.65 V to 5.5 V
V
CC
= 3.3 V; V
I
= GND to V
CC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±0.1
0.1
6
0.1
0.45
0.3
0.4
0.55
0.55
±5
10
-
V
V
V
V
V
V
µA
µA
pF
0.75
×
V
CC
-
V
CC
−
0.1
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
-
-
-
-
0.25
×
V
CC
-
-
-
-
-
-
V
V
V
V
V
V
V
V
Conditions
Min
Typ
[1]
Max
Unit
HIGH-level output voltage V
I
= V
IH
or V
IL
74LVC1GU04_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 12 June 2007
4 of 15
NXP Semiconductors
74LVC1GU04
Inverter
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +125
°C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
V
CC
= 1.65 V to 5.5 V
V
CC
= 1.65 V to 5.5 V
I
O
=
−100 µA;
V
CC
= 1.65 V to 5.5 V
I
O
=
−4
mA; V
CC
= 1.65 V
I
O
=
−8
mA; V
CC
= 2.3 V
I
O
=
−12
mA; V
CC
= 2.7 V
I
O
=
−24
mA; V
CC
= 3.0 V
I
O
=
−32
mA; V
CC
= 4.5 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 100
µA;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
CC
input leakage current
supply current
V
I
= 5.5 V or GND; V
CC
= 0 V to
5.5 V
V
I
= 5.5 V or GND; I
O
= 0 A;
V
CC
= 1.65 V to 5.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±0.1
-
0.1
0.7
0.45
0.6
0.80
0.80
±5
200
V
V
V
V
V
V
µA
µA
0.8
×
V
CC
-
V
CC
−
0.1
0.95
1.7
1.9
2.0
3.4
-
-
-
-
-
-
-
-
-
0.2
×
V
CC
-
-
-
-
-
-
V
V
V
V
V
V
V
V
Conditions
Min
Typ
[1]
Max
Unit
HIGH-level output voltage V
I
= V
IH
or V
IL
[1]
All typical values are measured at V
CC
= 3.3 V and T
amb
= 25
°C.
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see
Figure 10.
Symbol Parameter
t
pd
Conditions
[2]
−40 °C
to +85
°C
Min
Typ
[1]
1.7
1.3
1.7
1.6
1.3
Max
5.0
4.0
5.0
3.7
3.0
−40 °C
to +125
°C
Unit
Min
0.3
0.3
0.5
0.5
0.5
Max
6.5
5.5
6.5
5.0
4.0
ns
ns
ns
ns
ns
propagation delay A to Y; see
Figure 7
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V
V
CC
= 3.0 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
0.3
0.3
0.5
0.5
0.5
74LVC1GU04_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 12 June 2007
5 of 15
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