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SK55B: 产品描述5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA; 产品类别半导体分立半导体; 文件大小447KB，共2页; 制造商DIOTECH; 官网地址http://www.kdiode.com/

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SK55B概述

5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts

Forward Current - 5.0 Ampere

SK52B THRU SK510B

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

●

For surface mounted applications

●

Metal silicon junction,majority carrier conduction

●

Low reverse leakage

●

Built-in strain relief,ideal for automated placement

●

High forward surge current capability

●

High temperature soldering guaranteed:

250 C/10 seconds at terminals

●

SMB ( DO-214AA )

.083(2.11)

.075(1.91)

.155(3.94)

.130(3.30)

.185(4.70)

.160(4.06)

.012(.305)

.006(.152)

MECHANICAL DATA

Case

: JEDEC SMB(DO-214AA) molded plastic body

Terminals

: Solder plated , solderable per MIL-STD-750,

Method 2026

Polarity

: Color band denotes cathode end

Mounting Position

: Any

Weight

:0.005 ounce, 0.138 grams

.096(2.44)

.084(2.13)

.060(1.52)

.030(0.76)

.008(.203)

.002(.051)

.220(5.59)

.200(5.08)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

(see fig.1)

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 5.0A

Maximum DC reverse current

=25℃

at rated DC blocking voltage

=100℃

Typical junction capacitance (NOTE 1)

Typical thermal resistance (NOTE 2)

Operating junction temperature range

Storage temperature range

SYMBOLS

SK52B SK53B

SK54B SK55B SK56B SK58B SK510B

UNITS

RRM

RMS

(AV)

FSM

STG

5.0

120.0

100

0.55

0.5

0.70

300

0.85

0.1

2.0

℃/W

℃

-55 to +125

-55 to +150

℃

Note:1.Measured

at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

SK55B相似产品对比

	SK55B	SK510B	SK53B	SK58B	SK54B
描述	5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA	5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA	RECTIFIER DIODE	5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA	5 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AA
端子数量	-	2	-	2	2
元件数量	-	1	-	1	1
加工封装描述	-	GREEN, PLASTIC, SMB, 2 PIN	-	GREEN, PLASTIC, SMB, 2 PIN	绿色, 塑料, SMB, 2 PIN
状态	-	ACTIVE	ACTIVE	ACTIVE	ACTIVE
包装形状	-	RECTANGULAR	-	RECTANGULAR	矩形的
包装尺寸	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
表面贴装	-	Yes	-	Yes	Yes
端子形式	-	C BEND	-	C BEND	C BEND
端子涂层	-	PURE TIN	-	PURE TIN	PURE 锡
端子位置	-	DUAL	-	DUAL	双
包装材料	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	塑料/环氧树脂
工艺	-	SCHOTTKY	-	SCHOTTKY	SCHOTTKY
结构	-	SINGLE	-	SINGLE	单一的
二极管元件材料	-	SILICON	-	SILICON	硅
二极管类型	-	RECTIFIER DIODE	整流二极管	RECTIFIER DIODE	整流二极管
应用	-	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE
相数	-	1	-	1	1
最大重复峰值反向电压	-	100 V	-	100 V	40 V
最大平均正向电流	-	5 A	-	5 A	5 A
最大非重复峰值正向电流	-	120 A	-	120 A	120 A

SK55B

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