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SB180

产品描述1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小408KB,共2页
制造商DIOTECH
官网地址http://www.kdiode.com/
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SB180概述

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

1 A, 80 V, 硅, 信号二极管, DO-41

SB180规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述D4, 2 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层MATTE TIN
端子位置AXIAL
包装材料PLASTIC/EPOXY
工艺SCHOTTKY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
最大功耗极限1.25 W
二极管类型SIGNAL DIODE
最大重复峰值反向电压80 V
最大平均正向电流1 A

文档预览

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SB120 THRU SB1100
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-41
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
MECHANICAL DATA
Case
: JEDEC DO-41 molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.012 ounce, 0.33 grams
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
L
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
SB120 SB130 SB140
20
14
30
21
40
28
SB150 SB160
50
35
1.0
60
42
SB180 SB1100
80
56
100
70
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
C
j
R
R
JL
JA
40
0.50
0.5
10
110
15
50
-65 to +150
80
0.70
0.85
A
V
mA
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
T
j
, T
STG
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB180相似产品对比

SB180 SB120 SB150 SB130 SB160
描述 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41

 
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