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IRHM7450SEU: 产品描述Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小584KB，共8页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRHM7450SEU概述

Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRHM7450SEU规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
其他特性	HIGH RELIABILITY, RADIATION HARDENED
雪崩能效等级（Eas）	500 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V
最大漏极电流 (ID)	12 A
最大漏源导通电阻	0.57 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-MSFM-P3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	48 A
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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PD-90673D

IRHM7450

JANSR2N7270

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRHM7450

IRHM3450

IRHM5450

IRHM8450

Radiation Level

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

RDS(on)

0.45

11A

QPL Part Number

JANSR2N7270

JANSF2N7270

JANSG2N7270

JANSH2N7270

500V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard HEXFET TECHNOLOGY

TO-254

Description

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications.

This technology has over a decade of proven performance

and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Features



Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Light Weight

ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

@ V

= 12V, T

= 25°C

dv/dt

STG

Continuous Drain Current

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy



Avalanche Current



Repetitive Avalanche Energy



Peak Diode Recovery dv/dt



Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

7.0

150

1.2

± 20

500

3.5

-55 to + 150

@ V

= 12V, T

= 100°C Continuous Drain Current

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2019-09-06

IRHM7450SEU相似产品对比

	IRHM7450SEU	IRHM7450DPBF	IRHM7450SEPBF	IRHM7450SED	IRHM7450SEDPBF	IRHM7450SEUPBF	IRHM7450UPBF	IRHM7450PBF	IRHM7450U	IRHM7450D
描述	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
是否无铅	含铅	不含铅	不含铅	含铅	不含铅	不含铅	不含铅	不含铅	含铅	含铅
是否Rohs认证	不符合	符合	符合	不符合	符合	符合	符合	符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-CSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
雪崩能效等级（Eas）	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V	500 V	500 V	500 V	500 V	500 V	500 V	500 V	500 V	500 V
最大漏极电流 (ID)	12 A	11 A	12 A	12 A	12 A	12 A	11 A	11 A	11 A	11 A
最大漏源导通电阻	0.57 Ω	0.5 Ω	0.57 Ω	0.57 Ω	0.57 Ω	0.57 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-CSFM-P3	S-MSFM-P3	S-MSFM-P3
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	CERAMIC, METAL-SEALED COFIRED	METAL	METAL
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	NOT SPECIFIED	260	260	260	260	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	48 A	44 A	48 A	48 A	48 A	48 A	44 A	44 A	44 A	44 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	40	40	NOT SPECIFIED	40	40	40	40	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
其他特性	HIGH RELIABILITY, RADIATION HARDENED	RADIATION HARDENED	-	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
外壳连接	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
JEDEC-95代码	-	TO-254AA	TO-254AA	-	-	-	TO-254AA	TO-254AA	TO-254AA	TO-254AA
功耗环境最大值	-	150 W	150 W	-	-	-	150 W	150 W	150 W	150 W

IRHM7450SEU

IRHM7450SEU概述

IRHM7450SEU规格参数

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IRHM7450SEU相似产品对比

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