CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHEMH11PT
CURRENT 50 mAmpere
FEATURE
* Small surface mounting type. (SOT-563)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Two CHDTC114E chips in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
(1)
(5)
SOT-563
0.9~1.1
0.15~0.3
(3)
(4)
0.50
0.50
1.5~1.7
MARKING
* H11
1.1~1.3
0.5~0.6
0.09~0.18
3
R1
R2
1
CIRCUIT
1.5~1.7
R2
4
R1
6
Dimensions in millimeters
SOT-563
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
DC Output current
I
C(Max.)
P
TOT
T
STG
T
J
Rθ
J-A
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-07
PARAMETER
Supply voltage
Input voltage
CONDITIONS
−
MIN.
MAX.
50
+40
50
V
V
UNIT
-10
−
−
T
amb
≤
25
O
C, Note 1
−
−55
−
junction - ambient air
−
mA
100
150
+150
150
625
mW
O
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
C
C
C/W
O
O
RATING CHARACTERISTIC CURVES ( CHEMH11PT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
50
V
O
=0.3V
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
OUTPUT CURRENT : Io
(A)
V
CC
=5V
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100
200
500 1m
2m
5m 10m 20m 50m 100m
Ta =- 40 C
25
O
C
=
100
O
C
O
2m
1m
500
200
100
50
20
10
5
2
1
0
Ta=100
O
C
25
O
C
-40
O
C
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
Fig.3 DC current gain vs. output
current
1k
500
OUTPUT VOLTAGE : V
O(on)
(V)
DC CURRENT GAIN : G
I
Fig.4 Output voltage vs. output
current
1
500m
l
O
/l
I
=20
Ta=100
O
C
25
O
C
-40
O
C
V
O
=5V
Ta=100
O
C
25
O
C
-40
O
C
200
100
50
20
10
5
2
1
100 200
200m
100m
50m
20m
10m
5m
2m
500 1m 2m
5m 10m 20m 50m100m
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
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