74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
Rev. 02 — 12 May 2009
Product data sheet
1. General description
The 74HC3G07 and 74HCT3G07 are high-speed Si-gate CMOS devices. They provide
three buffers with open-drain outputs.
The outputs of the 74HC3G07 and 74HCT3G07 devices are open drains and can be
connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH
wired-AND functions. For digital operation this device must have a pull-up resistor to
establish a logic HIGH-level.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features
I
I
I
I
I
Wide supply voltage range from 2.0 V to 6.0 V
High noise immunity
Low power dissipation
Multiple package options
ESD protection:
N
HBM JESD22-A114E exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC3G07DP
74HCT3G07DP
74HC3G07DC
74HCT3G07DC
74HC3G07GD
74HCT3G07GD
−40 °C
to +125
°C
XSON8U
−40 °C
to +125
°C
VSSOP8
−40 °C
to +125
°C
TSSOP8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3
×
2
×
0.5 mm
NXP Semiconductors
74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
4. Marking
Table 2.
Marking code
Marking code
H07
T07
H07
T07
H07
T07
Type number
74HC3G07DP
74HCT3G07DP
74HC3G07DC
74HCT3G07DC
74HC3G07GD
74HCT3G07GD
5. Functional diagram
1
1A
1Y
1A
1Y
1
2A
2Y
2A
2Y
Y
3A
3Y
3A
001aah762
1
3Y
001aah763
A
GND
mna591
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one buffer)
6. Pinning information
6.1 Pinning
74HC3G07
74HCT3G07
1A
1
2
3
4
8
7
6
5
V
CC
1Y
3A
2Y
74HC3G07
74HCT3G07
1A
3Y
2A
GND
1
2
3
4
001aak032
3Y
8
7
6
5
V
CC
1Y
3A
2Y
2A
GND
001aak033
Transparent top view
Fig 4.
Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 5.
Pin configuration SOT996-2 (XSON8U)
74HC_HCT3G07_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 12 May 2009
2 of 13
NXP Semiconductors
74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
6.2 Pin description
Table 3.
Symbol
1A, 2A, 3A
GND
1Y, 2Y, 3Y
V
CC
Pin description
Pin
1, 3, 6
4
7, 5, 2
8
Description
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Input nA
L
H
[1]
Function table
[1]
Output nY
L
Z
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
D
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output voltage
output current
supply current
ground current
storage temperature
dynamic power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V
active mode
high-impedance mode
V
O
=
−0.5
V to 7.0 V
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
−0.5
-
−20
−0.5
−0.5
−25
-
−50
−65
-
Max
7.0
±20
-
V
CC
+ 0.5
7.0
-
50
-
+150
300
Unit
V
mA
mA
V
V
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
°C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8U package: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
74HC_HCT3G07_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 12 May 2009
3 of 13
NXP Semiconductors
74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
74HC3G07
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
6.0
V
CC
+125
625
139
83
Min
4.5
0
0
−40
-
-
-
74HCT3G07
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
5.5
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol Parameter
74HC3G07
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
LO
I
CC
C
I
input leakage
current
output leakage
current
supply current
input capacitance
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
IH
; V
O
= V
CC
or GND
per input pin; V
CC
= 6.0 V;
V
I
= V
CC
or GND; I
O
= 0 A;
-
-
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
-
1.5
0.1
0.1
0.1
0.33
0.33
±0.1
±5.0
10
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1.0
±10
20
-
V
V
V
V
V
µA
µA
µA
pF
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
−40 °C
to +85
°C
Min
Typ
[1]
Max
−40 °C
to +125
°C
Min
Max
Unit
74HC_HCT3G07_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 12 May 2009
4 of 13
NXP Semiconductors
74HC3G07; 74HCT3G07
Triple buffer with open-drain outputs
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol Parameter
74HCT3G07
V
IH
V
IL
V
OL
HIGH-level input
voltage
LOW-level input
voltage
LOW-level output
voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
I
I
LO
I
CC
∆I
CC
C
I
[1]
Conditions
−40 °C
to +85
°C
Min
2.0
-
Typ
[1]
1.6
1.2
Max
-
0.8
−40 °C
to +125
°C
Min
2.0
-
Max
-
0.8
Unit
V
V
-
-
-
-
-
-
-
0
0.15
-
-
-
-
1.5
0.1
0.33
±1.0
±5.0
10
375
-
-
-
-
-
-
-
-
0.1
0.4
±1.0
±10
20
410
-
V
V
µA
µA
µA
µA
pF
input leakage
current
output leakage
current
supply current
additional supply
current
input capacitance
V
I
= V
CC
or GND; V
CC
= 5.5 V
V
I
= V
IH
; V
O
= V
CC
or GND
per input pin; V
CC
= 5.5 V;
V
I
= V
CC
or GND; I
O
= 0 A;
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
−
2.1 V; I
O
= 0 A
Typical values are measured at T
amb
= 25
°C.
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); all typical values are measured at T
amb
= 25
°
C; for test circuit see
Figure 7.
Symbol Parameter
74HC3G07
t
PZL
OFF-state to LOW
propagation delay
nA to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
PLZ
LOW to OFF-state
propagation delay
nA to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
THL
HIGH to LOW output nY; see
Figure 6
transition time
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[1]
Conditions
−40 °C
to +85
°C
Min
Typ
Max
−40 °C
to +125
°C
Min
Max
Unit
-
-
-
-
-
-
-
-
-
-
25
9
7
25
11
10
18
6
5
4
95
19
16
95
23
23
95
19
16
-
-
-
-
-
-
-
-
-
-
-
125
25
20
125
30
26
125
25
20
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT3G07_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 12 May 2009
5 of 13
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