AP9412GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Fast Switching Performance
▼
Simple Drive Requirement
▼
Full Isolation Package
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
6mΩ
68A
S
Description
AP9412 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220CFM package is widely preferred for all
commercial-industrial through hole applications. The mold
compound provides a high isolation voltage capability and low
thermal resistance between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 10V
Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
.
Rating
30
+20
68
43
250
34.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
65
Units
℃/W
℃/W
1
201408262
Data and specifications subject to change without notice
AP9412GI-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=24V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
Min.
30
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
60
-
-
26
4.6
16
10
7
36
20
450
295
Max. Units
-
6
8
2.5
-
10
+100
42
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
2020 3230
.
f=1.0MHz
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=14A,
V
GS
=0
V
,
dI/dt=100A/µs
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Min.
-
-
-
Typ.
-
30
29
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed T
Jmax.
.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9412GI-HF
250
120
T
C
=25 C
200
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
C
=150
o
C
100
10V
7.0V
5.0V
4.5V
V
G
=3.0V
80
150
60
100
40
50
20
0
0
1
2
3
4
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I
D
= 30 A
T
C
=25 C
R
DS(ON)
(m
Ω
)
10
o
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
1.6
8
.
1.2
6
0.8
0.31
4
0.4
0
2
4
6
8
10
-50
0
50
100
t
rr
o
V
GS
, Gate-to-Source Voltage (V)
Q
rr
150
T
j
, Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
30
1.2
T
j
=150 C
20
o
T
j
=25 C
o
Normalized V
GS(th)
I
S
(A)
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9412GI-HF
f=1.0MHz
12
10000
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
10
8
C (pF)
V
DS
=15V
V
DS
=20V
V
DS
=24V
C
iss
1000
6
4
C
oss
C
rss
2
0
0
10
20
30
40
50
60
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
100us
I
D
(A)
0.1
.
10
0.1
0.05
1ms
10ms
100ms
1s
DC
1
10
100
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25
o
C
Single Pulse
1
0.1
0.01
Single Pulse
0.01
0.00001
0.31
0.001
0.01
0.1
1
t
rr
Q
rr
10
0.0001
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9412GI-HF
MARKING INFORMATION
Part Number
9412GI
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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