74HC11; 74HCT11
Triple 3-input AND gate
Rev. 04 — 25 March 2010
Product data sheet
1. General description
The 74HC11; 74HCT11 are high-speed Si-gate CMOS devices that comply with JEDEC
standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL).
The 74HC11; 74HCT11 provides a triple 3-input AND function.
2. Features
Input levels:
For 74HC11: CMOS level
For 74HCT11: TTL level
ESD protection:
HBM JESD22-A114F exceeds 2 000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
−40 °C
to +85
°C
and from
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC11N
74HCT11N
74HC11D
74HCT11D
74HC11DB
74HCT11DB
74HC11PW
74HCT11PW
−40 °C
to +125
°C
TSSOP14
−40 °C
to +125
°C
SSOP14
−40 °C
to +125
°C
SO14
plastic small outline package; 14 leads; body width
3.9 mm
plastic shrink small outline package; 14 leads; body
width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT108-1
SOT337-1
SOT402-1
−40 °C
to +125
°C
Name
DIP14
Description
plastic dual in-line package; 14 leads (300 mil)
Version
SOT27-1
Type number
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
4. Functional diagram
1
1
2
13
3
4
5
9
10
11
1A
1B
1C
2A
2B
2C
3A
3B
3C
mna793
2
1Y
12
13
3
2Y
6
4
5
&
12
&
6
A
3Y
8
9
10
11
mna792
&
8
B
C
Y
mna794
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram for one gate
5. Pinning information
5.1 Pinning
74HC11
74 HCT11
1A
1B
2A
2B
2C
2Y
GND
1
2
3
4
5
6
7
001aal407
14 V
CC
13 1C
1A
12 1Y
11 3C
10 3B
9
8
3A
3Y
1B
2A
2B
2C
2Y
GND
1
2
3
4
5
6
7
74HC11
74HCT11
14 V
CC
13 1C
12 1Y
11 3C
10 3B
9
8
3A
3Y
001aal408
Fig 4.
Pin configuration DIP14 and SO14
Fig 5.
Pin configuration (T)SSOP14
5.2 Pin description
Table 2.
Symbol
1A, 2A, 3A
1B, 2B, 3B
GND
1C, 2C, 3C
1Y, 2Y, 3Y
V
CC
Pin description
Pin
1, 3, 9
2, 4, 10
7
13, 5, 11
12, 6, 8
14
Description
data input
data input
ground (0 V)
data input
data output
supply voltage
74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
2 of 15
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
6. Functional description
Table 3.
Input
nA
L
X
X
H
[1]
Function selection
[1]
Output
nB
X
L
X
H
nC
X
X
L
H
nY
L
L
L
H
H = HIGH voltage level; L = LOW voltage level; X = don’t care
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
DIP14 package
SO14 and (T)SSOP14
packages
[1]
[2]
[2]
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
Min
−0.5
-
-
-
-
−50
−65
-
-
Max
+7
±20
±20
±25
50
-
+150
750
500
Unit
V
mA
mA
mA
mA
mA
°C
mW
mW
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For DIP14 package: P
tot
derates linearly with 12 mW/K above 70
°C.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70
°C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60
°C.
74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
3 of 15
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
V
CC
V
I
V
O
T
amb
Δt/ΔV
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
74HC11
Typ
5.0
-
-
-
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
−40
-
-
-
74HCT11
Typ
5.0
-
-
-
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC11
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 μA;
V
CC
= 2.0 V
I
O
=
−20 μA;
V
CC
= 4.5 V
I
O
=
−20 μA;
V
CC
= 6.0 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
I
O
=
−5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
μA;
V
CC
= 2.0 V
I
O
= 20
μA;
V
CC
= 4.5 V
I
O
= 20
μA;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
input leakage
current
supply current
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
0.1
0.1
0.1
0.26
0.26
±0.1
2.0
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
±1
20
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1
40
V
V
V
V
V
μA
μA
1.9
4.4
5.9
3.98
5.48
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
°C
Typ
Max
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
Max
Min
Max
74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
4 of 15
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
C
I
74HCT11
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
−20 μA
I
O
=
−4.0
mA
V
OL
I
I
I
CC
ΔI
CC
LOW-level
output voltage
input leakage
current
supply current
additional
supply current
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
μA;
V
CC
= 4.5 V
V
I
= V
CC
or GND;
V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input pin;
V
I
= V
CC
−
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
-
-
-
0
-
-
100
0.1
±0.1
2.0
360
-
-
-
-
0.1
±1
20
450
-
-
-
-
0.1
±1
40
490
V
μA
μA
μA
4.4
3.98
4.5
4.32
-
-
4.4
3.84
-
-
4.4
3.7
-
-
V
V
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
input
capacitance
Conditions
Min
-
25
°C
Typ
3.5
Max
-
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
-
Max
-
Min
-
Max
-
pF
C
I
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V;
C
L
= 50 pF;
for load circuit see
Figure 7.
Symbol Parameter
Conditions
Min
74HC11
t
pd
propagation delay nA, nB to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
[3]
[2]
[1]
25
°C
Typ
Max
−40 °C
to +125
°C
Unit
Max
(85
°C)
Max
(125
°C)
-
-
-
-
-
-
-
-
32
12
9
10
19
7
6
18
100
20
-
17
75
15
13
-
125
25
-
21
95
19
16
-
150
30
-
26
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
5 of 15
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
