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JANTXV1N3032DUR-1

产品描述Zener Diode, 33V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN
产品类别分立半导体    二极管   
文件大小989KB,共18页
制造商Compensated Devices Inc
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JANTXV1N3032DUR-1概述

Zener Diode, 33V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN

JANTXV1N3032DUR-1规格参数

参数名称属性值
厂商名称Compensated Devices Inc
包装说明O-LELF-R2
Reach Compliance Codeunknown
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-LELF-R2
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
参考标准MIL-19500/115K
标称参考电压33 V
表面贴装YES
技术ZENER
端子形式WRAP AROUND
端子位置END
最大电压容差1%
工作测试电流7.5 mA

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 November 2004.
INCH-POUND
MIL-PRF-19500/115K
16 August 2004
SUPERSEDING
MIL-PRF-19500/115J
10 October 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
1N3821A THROUGH 1N3828A, 1N3016B THROUGH 1N3051B,
1N3821A-1 THROUGH 1N3828A-1, 1N3016B-1 THROUGH 1N3051B-1,
1N3821AUR-1 THROUGH 1N3828AUR-1, 1N3016BUR-1 THROUGH 1N3051BUR-1,
PLUS C- AND D- TOLERANCE SUFFIX,
JAN, JANTX, JANTXV, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with
voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each
device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.
1.2 Physical dimensions. See figures 1 (DO-13), 2 (DO-41), 3 (DO-213AB), 4, and 5 (for JANHC).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.8) herein and as follows:
-55°C
Top
+175°C; -55°C
TSTG
+175°C.
Type
DO-13, DO-41
DO-213AB
PT
W
1.0 (1)
1.0 (2)
TL
°C
+95
TEC
°C
+125
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
(1) L = .375 inch (9.53 mm). Both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate IZ to
0.0 mA dc at TL = +175°C).
(2) Derate to 0 at TEC = +175°C.
* 1.4 Primary electrical characteristics. Primary electrical characteristic are as shown in primary test ratings (see
3.8) herein and as follows: 3.3 V dc≤ Vz
200 V dc. A and B suffix devices are 5 percent voltage tolerance. C suffix
devices are 2 percent voltage tolerance. D suffix devices are 1 percent voltage tolerance.
Type
DO-13
DO-41
DO-213AB
R
θJL
(1)
°C/W
80
50
R
θJEC
(2)
°C/W
50
(1) L = .375 inch (9.53 mm).
(2) Junction to end-caps.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
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