Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D743
BZA900A-series
Quadruple ESD transient voltage
suppressor
Product data sheet
2001 Sep 03
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
FEATURES
•
ESD rating >8 kV, according to IEC61000-4-2
•
SOT665 surface mount package
•
Common anode configuration.
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT665 package for 4-bit wide ESD transient
suppression.
MARKING
TYPE NUMBER
BZA956A
BZA962A
BZA968A
MARKING CODE
Z1
Z2
Z3
PINNING
PIN
1
2
3
4
5
cathode 1
BZA900A-series
DESCRIPTION
common anode
cathode 2
cathode 3
cathode 4
handbook, halfpage
5
4
1
3
2
4
5
1
2
3
MGW315
Fig.1 Simplified outline (SOT665) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
total power dissipation
non repetitive peak reverse power
dissipation:
BZA956A
BZA962A
BZA968A
T
stg
T
j
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit board.
storage temperature
junction temperature
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
note 2; see Fig.5
square pulse; t
p
= 1 ms; see Fig.3
−
−
−
−65
−
16
15
14
+150
150
W
W
W
°C
°C
−
−
−
−
note 1
200
4
335
mA
mA
A
mW
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
non-repetitive peak forward current t
p
= 1 ms; square pulse
2001 Sep 03
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder
point; note 1
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
BZA900A-series
VALUE
370
135
125
UNIT
K/W
K/W
K/W
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZA956A
BZA962A
BZA968A
Table 1
Per type; BZ956A to BZA968A
T
j
= 25
°C
unless otherwise specified.
TYPE
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 1 mA
DIFFERENTIAL
TEMP.
DIODE CAP.
RESISTANCE
COEFF.
C
d
(pF)
r
dif
(Ω)
S
Z
(mV/K) at at f = 1 MHz;
at I
Z
= 1 mA
I
Z
= 1 mA
V
R
= 0
MAX.
400
300
200
TYP.
0.3
1.6
2.2
MAX.
125
105
90
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A) at t
p
= 1 ms;
T
amb
= 25 ×°C
MAX.
2.2
2.1
2.0
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
1000
500
100
nA
nA
nA
I
F
= 200 mA
CONDITIONS
MAX.
1.3
V
UNIT
MIN.
BZA956A
BZA962A
BZA968A
5.32
5.89
6.46
TYP.
5.6
6.2
6.8
MAX.
5.88
6.51
7.14
2001 Sep 03
3
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
GRAPHICAL DATA
BZA900A-series
handbook, halfpage
10
MGW318
10
2
handbook, halfpage
PZSM
(W)
MGW319
I ZSM
(A)
BZA956A
BZA956A
BZA962A
1
BZA968A
10
BZA962A
BZA968A
10
−1
10
−2
10
−1
1
t p (ms)
10
1
10
−2
10
−1
1
t p (ms)
10
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
Fig.3
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
120
MGW320
MGT586
handbook, halfpage
400
Cd
(pF)
80
Ptot
(mW)
300
BZA956A
BZA962A
40
BZA968A
200
100
0
0
2
4
6 V (V)
R
8
0
0
50
100
Tamb (
°
C)
150
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Power derating curve.
2001 Sep 03
4
ADI 工业技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
