Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
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(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK9675-100A
18 August 2015
D2
PA
K
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
•
•
AEC Q101 compliant
Low conduction losses due to low on-state resistance
3. Applications
•
Automotive and general purpose power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
100
23
98
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
55
60
72
75
mΩ
mΩ
I
D
= 23 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1][2]
-
-
100
mJ
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BUK9675-100A
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK9675-100A
D2PAK
Description
plastic single-ended surface-mounted package
(D2PAK); 3 leads (one lead cropped)
Version
SOT404
Type number
7. Marking
Table 4.
Marking codes
Marking code
BUK9675-100A
Type number
BUK9675-100A
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
T
mb
= 100 °C; V
GS
= 5 V;
Fig. 2
T
mb
= 25 °C; V
GS
= 5 V;
Fig. 2
I
DM
T
stg
T
j
BUK9675-100A
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-55
-55
Max
100
100
15
98
16
23
92
175
175
Unit
V
V
V
W
A
A
A
°C
°C
2 / 12
peak drain current
storage temperature
junction temperature
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
18 August 2015
NXP Semiconductors
BUK9675-100A
N-channel TrenchMOS logic level FET
Symbol
I
S
I
SM
E
DS(AL)S
Parameter
source current
peak source current
Conditions
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 23 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
Min
-
-
Max
23
92
Unit
A
A
Source-drain diode
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[1][2]
-
100
mJ
[1]
[2]
120
P
der
(%)
80
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03aa16
I
D
(A)
25
aaa-019260
20
15
10
40
5
0
0
50
100
150
T
mb
(°C)
200
0
0
25
50
75
100
125
150 175
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
V
GS
≥ 5V
Fig. 2.
Continuous drain current as a function of
mounting base temperature
BUK9675-100A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
18 August 2015
3 / 12
NXP Semiconductors
BUK9675-100A
N-channel TrenchMOS logic level FET
10
3
I
DM
(A)
10
2
R
DS(on)
= V
DS
/ I
D
003aaf172
I
AL
(A)
10
2
003aaf188
10
(1)
tp = 1 µs
10 µs
10
D.C.
1
1
10
100 µs
1 ms
10 ms
10
2
V
DS
(V)
10
3
10
-1
1
(3)
(2)
T
mb
= 25 °C; I
DM
is single pulse
Fig. 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
10
-2
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) T
j (init)
= 25°C; (2) T
j (init)
= 150°C; (3) Repetitive
Avalanche
Fig. 4.
Avalanche rating; avalanche current as a
function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
0.02
0
10
- 2
10
- 6
10
- 5
10
- 4
10
- 3
P
δ=
t
p
T
Conditions
Min
-
Typ
-
Max
1.5
Unit
K/W
R
th(j-a)
Minimum footprint; FR4 board
-
50
-
K/W
003aaf173
10
- 1
t
p
10
- 2
t
T
10
- 1
1
t
p
(s)
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9675-100A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
18 August 2015
4 / 12
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