LG Semicon Co.,Ltd.
Description
The GM71C(S)4400C/CL is the new generation
dynamic RAM organized 1,048,576 words x 4 bit.
GM71C(S)4400C/CL has realized higher density,
higher performance and various functions by
utilizing advanced CMOS process technology. The
GM71C(S)4400C/CL offers Fast Page Mode as a
high speed access Mode. Multiplexed address
inputs permit the GM71C(S)4400C/CL to be
packaged in a standard 300mil 20(26) pin plastic
SOJ and standard 300mil 20(26) pin plastic
TSOP II. The package size provides high system
bit densities and is compatible with widely
available automated testing and insertion
equipment. System oriented features include single
power supply of 5V+/-10% tolerance, direct
interfacing capability with high performance logic
families such as Schottky TTL.
GM71C(S)4400C/CL
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Features
* 1,048,576 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
GM71C(S)4400C/CL-60
GM71C(S)4400C/CL-70
GM71C(S)4400C/CL-80
60
70
80
t
CAC
15
20
20
t
RC
110
130
150
t
PC
40
45
50
Pin Configuration
20 (26) SOJ
I/O1
I/O2
WE
RAS
A9
V
SS
I/O4
I/O3
CAS
OE
I/O1
I/O2
WE
RAS
A9
1
2
3
4
5
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
1.1mW (L-version)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 1024 Refresh Cycles/16ms
* 1024 Refresh Cycles/128ms (L-version)
* Battery Back Up Operation (L-version)
20 (26) TSOP II
20
19
18
17
16
V
SS
I/O4
I/O3
CAS
OE
V
SS
I/O4
I/O3
CAS
OE
20
19
18
17
16
1
2
3
4
5
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A8
A7
A6
A5
A4
15
14
13
12
11
6
7
8
9
10
A0
A1
A2
A3
V
CC
NORMAL TYPE
REVERSE TYPE
(Top View)
(Top View)
1
LG Semicon
GM71C(S)4400C/CL
Function
Address Inputs
Refresh Address Inputs
Data Input / Data Output
Row Address Strobe
Column Address Strobe
Pin Description
Pin
A0-A9
A0-A9
I/O1-I/O4
RAS
CAS
Pin
WE
OE
V
CC
V
SS
Function
Read/Write Enable
Output Enable
Power (+5V)
Ground
Ordering Information
Type No.
GM71C(S)4400CJ/CLJ-60
GM71C(S)4400CJ/CLJ-70
GM71C(S)4400CJ/CLJ-80
GM71C(S)4400CT/CLT-60
GM71C(S)4400CT/CLT-70
GM71C(S)4400CT/CLT-80
GM71C(S)4400CR/CLR-60
GM71C(S)4400CR/CLR-70
GM71C(S)4400CR/CLR-80
Access Time
60
ns
70
ns
80
ns
60
ns
70
ns
80
ns
60
ns
70
ns
80
ns
Package
300 Mil, 20 (26) Pin
Plastic SOJ
300 Mil, 20 (26) Pin
Plastic TSOP II
(Normal Type)
300 Mil, 20 (26) Pin
Plastic TSOP II
(Reverse Type)
Absolute Maximum Ratings*
Symbol
T
A
T
STG
V
IN
/V
OUT
V
CC
I
OUT
P
D
Parameter
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to V
SS
Voltage on V
CC
Relative to V
SS
Short Circuit Output Current
Power Dissipation
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
1.0
Unit
C
C
V
V
mA
W
*Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions
(T
A
= 0 ~ 70C)
Symbol
V
CC
V
IH
V
IL
V
IL
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage (I/O Pin)
Input Low Voltage (Others)
Min
4.5
2.4
-1.0
-2.0
Typ
5.0
-
-
-
Max
5.5
6.5
0.8
0.8
Unit
V
V
V
V
2
LG Semicon
GM71C(S)4400C/CL
DC Electrical Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C)
Symbol
V
OH
V
OL
I
CC1
Parameter
Output Level
Output
“H”
Level Voltage (I
OUT
= -5mA)
Output Level
Output
“L”
Level Voltage (I
OUT
= 4.2mA)
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min)
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS= V
IH
, D
OUT
= High-Z)
RAS-Only Refresh Current
Average Power Supply Current
RAS-Only Refresh Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min)
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= V
CC
- 0.2V , D
OUT
=High-Z)
CAS-before-RAS Refresh Current
(t
RC
= t
RC
min)
60ns
70ns
80ns
60ns
70ns
80ns
60ns
70ns
80ns
Min Max Unit Note
2.4
0
-
-
-
-
-
-
-
-
-
-
-
-
60ns
70ns
80ns
-
-
-
-
V
CC
0.4
110
100
90
2
110
100
90
110
100
90
1
200
110
100
90
300
uA
4, 5
mA
mA
uA
5
4, 5
mA
1, 3
mA
2
mA
mA
1, 2
V
V
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
Battery Back Up Current (Standby with CBR Refresh)
(t
RC
=125us, t
RAS
<=1us, WE=V
IH
, CAS=V
IL
,
OE, Address and D
IN
=V
IH
or V
IL
, D
OUT
=High-Z)
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
= Enable
Input Leakage Current
Any Input (0V<=V
IN
<=7V)
Output Leakage Current
(D
OUT
is Disabled, 0V<=V
OUT
<=7V)
I
CC8
-
-10
-10
5
10
10
mA
uA
uA
1
I
I(L)
I
O(L)
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the output
open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
4. L-version.
5. V
CC
-0.2V<=V
IH
<=6.5V, 0V<=V
IL
<=0.2V.
3
LG Semicon
GM71C(S)4400C/CL
Parameter
Input Capacitance (Address)
Input Capacitance (Clocks)
Data Input, Output Capacitance (Data-In, Out)
Capacitance
(V
CC
= 5V+/-10%, T
A
= 25C)
Symbol
C
I1
C
I2
C
I/O
Min
-
-
-
Max
5
7
10
Unit
§Ü
§Ü
§Ü
Note
1
1
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C, Notes 1, 14, 15, 16)
Test Conditions
Input rise and fall times: 5ns
Output load : 2 TTL gate + C
L
(100§Ü)
Input, output timing reference levels: 0.8V, 2.4V
(Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
Symbol
Parameter
Random Read or Write Cycle Time
RAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
IN
Delay Time
OE Delay Time from D
IN
CAS Set-up Time from D
IN
Transition Time
(Rise and Fall)
Refresh Period
Refresh Period (L-version)
-
-
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400
C/CL-60
C/CL-70
C/CL-80
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
Note
Min Max Min Max Min Max
110
40
60
15
0
10
0
15
20
15
15
60
10
15
0
0
3
-
-
10,000
10,000
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
t
T
t
REF
130
50
70
20
0
10
0
15
20
15
20
70
10
20
0
0
3
-
-
-
-
10,000
10,000
150
60
80
20
0
10
0
15
20
15
20
80
10
20
0
0
3
-
-
-
-
10,000
10,000
-
-
-
-
45
30
-
-
-
-
-
-
50
16
128
-
-
-
-
50
35
-
-
-
-
-
-
50
16
128
-
-
-
-
60
40
-
-
-
-
-
-
50
16
128
8
9
7
4
LG Semicon
GM71C(S)4400C/CL
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400
C/CL-60
C/CL-70
C/CL-80
Read Cycle
Symbol
Parameter
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Output Buffer Turn-off Time
Output Buffer Turn-off Time from OE
CAS to D
IN
Delay Time
OE Pulse width
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
2,3,17
3, 4,
13, 17
3, 5,
13, 17
Min Max Min Max Min Max
-
-
-
-
0
0
0
30
0
0
15
15
60
15
30
15
-
-
-
-
15
15
-
-
-
-
-
-
0
0
0
35
0
0
20
20
70
20
35
20
-
-
-
-
15
15
-
-
-
-
-
-
0
0
0
40
0
0
20
20
80
20
40
20
-
-
-
-
15
15
-
-
t
RAC
t
CAC
t
AA
t
OAC
t
RCS
t
RCH
t
RRH
t
RAL
t
OFF1
t
OFF2
t
CDD
t
OEP
3,17
18
18
6
6
Write Cycle
Symbol
Parameter
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400
C/CL-60
C/CL-70
C/CL-80
Min Max Min Max Min Max
0
15
10
15
15
0
15
-
-
-
-
-
-
-
0
15
10
20
20
0
15
-
-
-
-
-
-
-
0
15
10
20
20
0
15
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
Note
10
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
11
11
5
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