NLPS22990, NLPS22990N
5.5 V, 10 A, 3.9 mW
On-Resistance Load Switch
The NLPS22990 and NLPS22990N devices are 3.9 mW,
single−channel load switches with controlled and adjustable turn ons
and integrated PG indicators.
Each device is an N−channel MOSFET operating over an input
voltage range of 0.6 V to 5.5 V. The switch supports a maximum
continuous current of 10 A. 3.9 mW switch on resistance minimizes
both the voltage drop across the load switch and the power loss from
the load switch.
Controlled rise time of the device switch reduces inrush currents
caused by large bulk load capacitances, thereby reducing or
eliminating power supply droop. Adjustable slew rate through CT
provides the design flexibility to trade off inrush current and power up
timing requirements. Integrated PG indicator notifies the system about
the status of the load switch to facilitate seamless power sequencing.
The NLPS22990 has a 200−W On−chip resistor for quick discharge
of the output when switch is disabled. This avoids unknown state
caused by floating supply to the downstream load.
Features
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WDFN10
MN SUFFIX
CASE 511DX
MARKING DIAGRAM
22AMG
G
22A = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
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Applications
Integrated Single Channel Load Switch
V
BIAS
Voltage Range: 2.5 V to 5.5 V
V
IN
Voltage Range: 0.6 V to VBIAS
On−Resistance
♦
R
ON
= 3.9 mW (typical) at V
IN
= 5 V (V
BIAS
= 5 V)
♦
R
ON
= 3.9 mW (typical) at V
IN
= 3.3 V (V
BIAS
= 3.3 V)
10−A Maximum Continuous Switch Current
Quiescent Current
♦
I
Q,VBIAS
= 85
mA
at V
BIAS
= 5 V
Shutdown Current
♦
I
SD,VBIAS
= 0.3
mA
at V
BIAS
= 5 V
♦
I
SD,VIN
= 1.3
mA
at V
BIAS
= 5 V, V
IN
= 5 V
Controlled and Adjustable Slew Rate through CT
Power Good (PG) Indicator
Quick Output Discharge (QOD) (NLPS22990 Only)
3−mm x 2−mm WQFN 10−pin Package with Thermal Pad
ESD Performance Tested per JESD 22
♦
2 kV HBM and 1 kV CDM
Notebooks, Chromebooks and Tablets
Desktop PC and Industrial PC
Solid State Drives (SSDs)
Servers
Telecom Systems
ORDERING INFORMATION
Device
NLPS22990MN1TAG
NLPS22990NMN1TAG
(In development)
Package
WDFN10
(Pb−Free)
Shipping
†
3000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2019
March, 2019
−
Rev. 0
1
Publication Order Number:
NLPS22990/D
NLPS22990, NLPS22990N
VIN
CT
VBIAS
ON
CHARGE
PUMP
VOUT
PG
CONTROL
LOGIC
DRIVER
NLPS22990 Only
GND
Figure 1. Block Diagram
NLPS22990
CT
C
T
Power
Supply
C
IN
ON
OFF
VOUT
VOUT
VOUT
PG
GND
R
PU
C
L
R
L
nc
VIN
VBIAS
ON
Figure 2. Typical Application
DEVICE COMPARISON
Device
NLPS22990
NLPS22990N
R
ON
at V
BIAS
= 5 V
3.9 mW
3.9 mW
I
MAX
10 A
10 A
Figure 3. On Resistance vs. Input Voltage
ENABLE
Active High
Active High
QOD
Yes
No
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2
NLPS22990, NLPS22990N
CT
nc
VIN
VBIAS
ON
1
2
3
4
5
VIN
(Thermal Pad
)
10
9
8
7
6
VOUT VOUT
VOUT VOUT
VOUT VOUT
PG
GND
PG
GND
10
9
8
7
6
VIN
(Thermal Pad
1
2
)
3
4
5
CT
nc
VIN
VBIAS
ON
Figure 4. WDFN10 Pin Assignment
Table 1. PIN DESCRIPTIONS
Pin Name
CT
nc
V
IN
V
BIAS
ON
GND
PG
V
OUT
Pin
1
2
3
4
5
6
7
8
9
10
V
IN
Thermal Pad
I
Switch input. VIN and thermal pad (exposed center pad) to alleviate ther-
mal stress. See the layout section for layout guidelines.
Pin Type
O
−
I
P
I
GND
O
O
V
OUT
slew rate control.
No connect.
Switch input. Bypass this input with a ceramic capacitor to GND.
Bias voltage. Power supply to the device.
Active high switch control input. Do not leave floating.
Device ground.
Power good. Active high open−drain output. Tie to GND if not used.
Switch output.
Description
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3
NLPS22990, NLPS22990N
Table 2. MAXIMUM RATINGS
Symbol
V
BIAS
V
IN
V
OUT
V
ON
V
PG
V
CT
I
MAX
I
PLS
V
IN
T
s
T
L
T
J
MSL
ESD
Bias Voltage
Input Voltage
Output Voltage
ON Voltage
PG Voltage
CT Voltage
Continuous Switch Current at T
J
= 125°C
Pulsed Switch Current, Pulse < 300
ms
2% Duty Cycle
Digital Control Pin Voltage on EN, SEL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 seconds
Junction Temperature
Moisture Sensitivity (Note 1)
ESD Protection (Note 2)
Human Body Model
Charged Device Model
±2000
±1000
Rating
Value
−0.3
to +6
−0.3
to +6
−0.3
to +6
−0.3
to +6
−0.3
to +6
−0.3
to +15
10
12
−0.5
to V
CC
+0.5
−65
to +150
300
125
Level 1
V
Unit
V
V
V
V
V
V
A
A
V
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
2. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM)
±2.0
kV per JEDEC standard: JESD22−A114.
Charged Device Model (CDM)
±1000
V per JEDEC standard: JESD22−C101.
Table 3. RECOMMENDED OPERATING CONDITIONS
Symbol
V
BIAS
V
IN
V
OUT
V
ON
V
PG
C
IN
T
A
Bias Voltage
Input Voltage
Output Voltage
ON Voltage
PG Voltage
Input Capacitor (Note 3)
Operating Temperature Range
0
0
1
−40
+105
Parameter
Min
2.5
0.6
Max
5.5
V
BIAS
V
IN
5.5
5.5
Unit
V
V
V
V
V
mF
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. See Application Information section.
Table 4. THERMAL INFORMATION
Symbol
R
qJA
R
qJC(top)
R
qJB
y
JT
y
JB
R
qJC(bot)
Parameter
Junction to Ambient Thermal Resistance
Junction to Case (top) Thermal Resistance
Junction to Board Thermal Resistance
Junction to Top Characterization Parameter
Junction to Bottom Characterization Parameter
Junction to Case (bottom) Thermal Resistance
Value
51.4
65
174
2.1
17
3.7
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
4. See Application Information section.
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NLPS22990, NLPS22990N
Table 5. DC ELECTRICAL CHARACTERISTICS
(Typical values are at T
A
= +25⁰C, unless otherwise noted.)
−40⁰C
to 85⁰C
Symbol
ON PIN
V
IH
V
IL
V
HYS
I
ON,LKG
PG PIN
V
OL
I
PG,LKG
I
Q,VBIAS
Output Voltage Low
Leakage Current into Pin
V
ON
= 0 V, I
PG
= 1 mA
V
PG
= 5 V
I
OUT
= 0 A,
V
IN
= V
ON
= 5 V
V
IN
= V
ON
= 3.3 V
I
SD,VBIAS
I
SD,VIN
V
BIAS
Shutdown Current
V
IN
Shutdown Current
V
ON
= 0 V, V
OUT
= 0 V
V
ON
= 0 V, V
OUT
= 0 V,
V
IN
= 5 V
V
IN
= 3.3 V
V
IN
= 2.5 V
V
IN
= 1.8 V
V
IN
= 1.05 V
V
IN
= 0.6 V
V
ON
= 0 V, V
OUT
= 0 V,
V
IN
= 3.3 V
V
IN
= 2.5 V
V
IN
= 1.8 V
V
IN
= 1.05 V
V
IN
= 0.6 V
3.3
−
−
−
−
−
0.8
0.6
0.5
0.3
0.2
3
2
2
1
1
−
−
−
−
−
7
5
4
3
2
5
3.3
5
3.3
5
−
−
−
−
−
−
1.3
0.8
0.6
0.5
0.4
0.2
4
3
2
2
1
1
−
−
−
−
−
−
10
7
5
4
3
2
mA
−
−
−
−
85
63
0.3
0.3
100
80
7
6
−
−
−
−
100
80
7
7
mA
mA
5, 3.3
5, 3.3
−
−
−
−
0.2
0.5
−
−
0.2
0.5
V
mA
Input Voltage High
Input Voltage Low
Hysteresis Voltage
5, 3.3
5, 3.3
5
3.3
Input Leakage Current
5, 3.3
1.0
0
−
−
−
−
−
99
128
−
5.5
0.5
−
−
0.1
1.0
0
−
−
−
5.5
0.5
−
−
0.1
mA
V
V
mV
Parameter
Test Conditions
V
BIAS
(V)
Min
Typ
Max
−40⁰C
to 105⁰C
Min
Max
Unit
POWER SUPPLY AND OTHER CURRENTS
V
BIAS
Quiescent Current
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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