NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 1 W
•
Tolerance series: approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•
General regulation functions.
PINNING
PIN
1
2
3
anode
cathode
anode
BZV49 series
DESCRIPTION
1
3
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
The diodes are available in the normalized E24 approx.
±5%
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
3
2
1
2
sym096
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BZV49-C2V4 to
BZV49-C75
note 1
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
BZV49-C2V4
BZV49-C2V7
BZV49-C3V0
BZV49-C3Y3
BZV49-C3V6
BZV49-C3V9
BZV49-C4V3
BZV49-C4V7
BZV49-C5V1
BZV49-C5V6
MARKING
CODE
2Y4
2Y7
3Y0
3Y3
3Y6
3Y9
4Y3
4Y7
5Y1
5Y6
TYPE
NUMBER
BZV49-C6V2
BZV49-C6V8
BZV49-C7V5
BZV49-C8V2
BZV49-C9V1
BZV49-C10
BZV49-C11
BZV49-C12
BZV49-C13
BZV49-C15
MARKING
CODE
6Y2
6Y8
7Y5
8Y2
9Y1
10Y
11Y
12Y
13Y
15Y
TYPE
NUMBER
BZV49-C16
BZV49-C18
BZV49-C20
BZV49-C22
BZV49-C24
BZV49-C27
BZV49-C30
BZV49-C33
BZV49-C36
BZV49-C39
MARKING
CODE
16Y
18Y
20Y
22Y
24Y
27Y
30Y
33Y
36Y
39Y
TYPE
NUMBER
BZV49-C43
BZV49-C47
BZV49-C51
BZV49-C56
BZV49-C62
BZV49-C68
BZV49-C75
−
−
−
MARKING
CODE
43Y
47Y
51Y
56Y
62Y
68Y
75Y
−
−
−
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2005 Feb 03
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.3
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
MIN.
BZV49 series
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−65
−
1
40
+150
150
W
W
°C
°C
MAX.
1
UNIT
V
2005 Feb 03
3
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