SCF2N6901T2
JANTX2N6901
JANTXV2N6901
LOGIC LEVEL POWER MOSFET
FOR RUGGED ENVIRONMENTS
DESCRIPTION
TO-205AF / TO-39
REF: MIL-PRF-19500/570
N-Channel
100 Volt
< 1.4 Ohm
1.69 Amp
SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabil-
ity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be
used for ground based telecommunications, vehicles, ships, weapon systems and other application where fail-
ure is not an option.
FEATURES
Available in JANTX and JANTXV equivalent levels
RDS
(ON)
< 1.4 Ω
Logic Level for simple Drive Requirements
Low Gate Charge for Fast Switching
Ease of Paralleling
Hermetically Sealed
Die Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER
l
D
@ V
GS
= 10 V, T
C
= 25° C
l
D
@ V
GS
= 10 V, T
C
= 100° C
IDM
PD @ TC = 25° C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
(1)
Max Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate to Source Voltage
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.69
1.07
5.0
8.33
0.067
±10
-55 to 150
300
0.98 typical
W
W/°C
V
°C
°C
g
A
UNITS
For footnotes refer to the last page
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com
sales@semicoa.com
MDS6901
REV. NEW
PAGE 1
SCF2N6901T2 / JANTX2N6901 /JANTXV2N6901
Electrical Characteristics @ T
J
25
°
C (unless otherwise specific)
PARAMETER
BV
DSS
ΔBV
DSS/
ΔT
J
Drain to Source Breakdown
Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain to Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
100
-
-
-
1.0
0.5
-
-
TYP
-
0.10
-
-
-
-
-
-
MAX
-
-
1.4
2.6
2.0
2
1
50
100
-100
5.0
1.0
2.9
25
80
45
80
UNITS
V
V/°C
TEST CONDITIONS
VGS = 0 V, ID = 1.0 mA
Reference to 25 °C, ID = 1.0 mA
VGS = 5 V, ID = 1.07 A
(2)
VGS = 5 V, ID = 1.07 A, Tj = 125 °C
R
DS(ON)
V
GS(th)
gfs
I
DSS
I
GSSF
I
GSSR
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ω
V
S(Ʊ)
µA
nA
nA
VDS = VGS, ID = 1 mA
VDS = 15 V, IDS = 1.69 A
(2)
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, Tj = 125 °C
VGS = 10 V
VGS = -10 V
nC
VGS = 5 V, ID = 1.69 A , VDS = 50 V
ns
VDD = 50 V, ID = 1.69 A,
VGS = 5 V, RG = 25 Ω
Source-Drain Diode Rating and Characteristics
PARMETER
I
S
I
SM
V
SD
Trr
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
MIN
-
-
0.8
-
TYP
-
-
-
-
MAX
1.69
1.69
1.6
250
UNITS
A
A
V
nS
TEST CONDITIONS
Tj = 25 °C, IS = 1.69 A, VGS = 0 V
(2)
Tj = 25 °C, IF = 1.0 A, di/dt ≤ 100 A/
µS, VDD ≤ 30 V
(2)
For Footnotes refer to the last page
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com
sales@semicoa.com
MDS6901
REV. NEW
PAGE 2
SCF2N6901T2 / JANTX2N6901 /JANTXV2N6901
TO-205AF Case Outline and Dimensions
Dimensions
Symbol
Min
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
Pin Assignment
Lead 1
Lead 2
Lead 3
Source
Gate
Drain
r
α
.029
.028
.250
.100
.050
.045
.034
.010
45° TP
0.74
0.71
.305
.160
.335
Inches
Max
.335
.180
.370
Millimeters
Min
7.75
4.07
8.51
Max
8.51
4.57
9.40
.200 typ
.016
.500
.016
.021
.750
.019
.050
5.08 typ
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
2.54
1.27
1.14
0.86
0.25
45° TP
Footnotes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse width < 300 µS; Duty Cycle < 2%
Visit us at www.semicoa.com for sales and contact information.
Data and specification subject to change without notice.
333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900
www.semicoa.com
sales@semicoa.com
MDS6901
REV. NEW
PAGE 3
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