2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V3
Features
•
Available in JAN, JANTX, JANTXV, JANS and
JANSR per MIL-PRF-19500/255
•
Radiation Tolerant Levels M, D, P, L and R
•
TO-18 (TO-206AA), Surface mount UA & UB
Packages
Applications
•
Switching and Linear Applications
•
DC and VHF Amplifier Applications
Electrical Specifications (T
A
= +25
o
C unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Minimum Maximum
Collector
-
Emitter Breakdown
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
I
C
= 10 mA dc
V
CB
= 75 V dc
V
CB
= 60 V dc
V
EB
= 6.0 V dc
V
EB
= 4.0 Vdc
V
CE
= 50 V dc
2N2221A, L, UA, UB
I
C
= 0.1 mA dc, V
CE
= 10 V dc
I
C
= 1.0 mA dc, V
CE
= 10 V dc
I
C
= 10 mA dc, V
CE
= 10 V dc
I
C
= 150 mA dc, V
CE
= 10 V dc
I
C
= 500 mA dc, V
CE
= 10 V dc
2N2222A, L, UA, UB
I
C
= 0.1 mA dc, V
CE
= 10 V dc
I
C
= 1.0 mA dc, V
CE
= 10 V dc
I
C
= 10 mA dc, V
CE
= 10 V dc
I
C
= 150 mA dc, V
CE
= 10 V dc
I
C
= 500 mA dc, V
CE
= 10 V dc
V
(BR)CEO
I
CBO1
I
CBO2
I
EBO1
I
EBO2
I
CES
V dc
µA dc
nA dc
µA dc
nA dc
nA dc
50
—
—
—
—
10
10
10
10
50
30
35
40
40
20
h
FE
50
75
100
100
30
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
I
CBO3
V dc
V dc
µA dc
—
0.6
—
150
—
120
—
—
325
—
300
—
0.3
1.0
1.2
2.0
10
Forward Current Transfer Ratio
Collector
-
Base Cutoff Current
Base
-
Emitter Saturation Voltage
Collector
-
Base Cutoff Current
I
C
= 150 mA dc; I
B
= 15 mA dc
I
C
= 500 mA dc; I
B
= 50 mA dc
I
C
= 150 mA dc; I
B
= 15 mA dc
I
C
= 500 mA dc; I
B
= 50 mA dc
T
A
= +150
o
C
V
CB
= 60 V dc
T
A
=
-55
o
C
V
CE
= 10 V dc; I
C
= 10 mA dc
2N2221A (all types)
2N2222A (all types)
Forward Current Transfer Ratio
1
h
FE6
15
35
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V3
Electrical Specifications (T
A
= +25°C unless otherwise specified)
Parameter
Dynamic Characteristics:
Small-Signal Short-Circuit
Forward Current Transfer Ratio
V
CE
= 10 V dc; I
C
= 1 mA dc; f = 1 kHz
2N2221A, L, UA, UB
2N2222A, L, UA, UB
h
fe
30
50
2.5
—
Test Conditions
Symbol Units
Minimum Maximum
Magnitude of Small-Signal Short-Circuit,
V
CE
= 20 V dc; I
C
= 20 mA dc; f = 100 MHz
Forward Current Transfer Ratio
Output Capacitance
Input Capacitance
(Output Open-Circuited)
Switching Characteristics:
Turn-On Time
Turn-Off Time
(See figure 17 of MIL-PRF-19500/255)
(See Figure 18 of MIL-PRF-19500/255)
V
CB
= 10 V dc; I
E
= 0; 100 kHz ≤ f ≤ 1 MHz
V
EB
= 0.5 V dc; I
C
= 0; 100 kHz ≤ f ≤ 1 MHz
| h
fe
|
—
C
obo
C
ibo
pF
pF
—
—
8
25
t
on
t
off
ns
ns
—
—
35
300
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V3
Absolute Maximum Ratings (T
A
= +25°C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
(1) (2)
T
A
= +25°C
2N2221A, AL
2N2222A, AL
Total Power Dissipation
(1) (2)
T
C
= +25°C
2N2221A, AL
2N2222A, AL
Total Power Dissipation
(1) (2)
T
A
= +25°C
2N2221AUA, UB
2N2222AUA, UB
Total Power Dissipation
(1) (2)
T
SP(IS)
= +25°C
2N2221AUA, UB
2N2222AUA, UB
Total Power Dissipation
(1) (2)
T
SP(AM)
= +25°C
2N2221AUA,
2N2222AUA
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50 V dc
75 V dc
6 V dc
800 mA dc
P
T
0.50 W
P
T
1W
P
T
0.50 W
(4)
P
T
1W
P
T
1.5 W
T
J
, T
STG
-65°C
to +200°C
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V3
Thermal Characteristics (T
A
= +25°C unless otherwise specified)
Characteristics
Thermal Resistance, Junction to Ambient
(2) (3)
2N2221A, AL
2N221AUA, 2N2222AUA
2N2221AUB, 2N2222AUB
Thermal Resistance, Junction to Case
2N2221A, AL
2N2222A, AL
(2) (3)
Symbol
Max. Value
R
θJA
325°C/W
325°C/W
325°C/W
(4)
(4)
R
θJC
150°C/W
150°C/W
Thermal Resistance, Junction to Solder Pad
(2) (3)
2N2221AUA, 2N2222AUA
2N2221AUB, 2N2222AUB
Thermal Resistance, Junction to Solder Pad
(2) (3)
2N2221AUA, 2N2222AUA
R
θJSP(IS)
110°C/W
90°C/W
R
θJSP(AM)
40°C/W
(1)
(2)
(3)
(4)
For derating, see figure 7, figure 8, figure 9, figure 10, and figure 11 of MIL-PRF-19500/255
See paragraph 3.3 of MIL-PRF-19500/255 for abbreviations
For thermal impedance curves, see figure12, figure 13, figure 14, figure 15 and figure 16 of MIL-PRF-19500/255.
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figure 8 and figure 13 for the UA and
UB packages and use R
ᶿJA.
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V3
Outline Drawing (TO-18):
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
a
Dimensions
Inches
Millimeters
Min.
Max.
Min.
Max.
0.178
0.195
4.52
1.95
0.170
0.209
0.016
0.500
0.016
—
0.250
0.100
—
0.028
0.036
—
45°Typ.
1, 2, 9, 11, 12, 13
0.210
0.230
0.021
0.750
0.019
0.050
—
—
0.030
0.048
0.046
0.010
4.32
5.31
0.41
12.70
0.41
—
6.35
2.54
—
0.71
0.91
—
5.33
5.84
0.53
19.05
0.48
1.27
—
—
0.76
1.22
1.17
0.25
Notes
—
—
—
6
7, 8
7, 8, 13
7, 8
7, 8
7, 8
—
5
3, 4
3
10
6
0.100 Typ.
2.54 Typ
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001
-.000
inch (1.37 +0.03
-0.00
mm) below seating plane shall be within 0.007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10.Dimension r (radius) applies to both inside corners of tab.
11.In accordance with ASME Y14.5M, diameters are equivalent to
Фx
symbology.
12.Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13.For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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