GBJ8005 THRU GBJ810
Reverse Voltage - 50 to 1000 Volts
GLASS PASSIVATED BRIDGE RECTIFIER
Forward Current - 8.0 Ampere
FEATURES
Glass passivated chip junction
●
Reliable low cost construction utilizing molded
plastic technique
●
Ideal for printed circuit board
●
Low reverse leakage current
●
Low forward voltage drop
●
High surge current capabiliy
●
GBJ
MECHANICAL DATA
●
●
Case:Molded plastic, GBJ
Terminals
:
Terminals: Leads solderable per MIL-STD-202
method 208 guaranteed
Epoxy: UL 94V-0 rate flame retardant
Mounting Position: Any
Dimensions in inches and (millimeters)
●
●
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current with
Heatsink at T
C
= 100
O
C
Peak Forward Surge Current, 8.3 ms Single Half-Sine
-Wave superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 4.0 A DC and 25
O
C
Maximum Reverse Current at T
A
= 25
O
C
at Rated DC Blocking Voltage T
A
= 125
O
C
Typical Junction Capacitance
Typical Thermal Resistance
2)
Operating and Storage Temperature Range
1)
2)
1)
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
,T
S
GBJ
8005
50
35
50
GBJ
801
100
70
100
GBJ
802
200
140
200
GBJ
804
400
280
400
10
170
1.1
5.0
500
55
1.6
GBJ
806
600
420
600
GBJ
808
800
560
800
GBJ
810
1000
700
1000
Units
V
V
V
A
A
V
µA
pF
O
C/W
O
-55 to +150
C
Measured at 1 MHz and applied reverse voltage of 4 VDC.
Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate
heatsink.
GBJ8005 THRU GBJ810
RATINGS AND CHARACTERISTIC CURVES
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
10
I
O
, AVERAGE RECTIFIED CURRENT (A)
8
With heatsink
1.0
6
4
Without heatsink
0.1
2
Resistive or
Inductive load
T
j
= 25
°
C
Pulse width = 300
µ
s
0
25
50
75
100
125
150
0.01
0
0.4
0.8
1.2
1.6
1.8
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
180
I
FSM
, PEAK FWD SURGE CURRENT (A)
T
j
= 150
°
C
120
C
j
, JUNCTION CAPACITANCE (pF)
160
Single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1MHz
10
80
40
0
1
1
10
100
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (
µ
A)
1000
100
T
j
= 125
°
C
T
j
= 100
°
C
10
1.0
T
j
= 50
°
C
T
j
= 25
°
C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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