GBJ10005 THRU GBJ1010
Reverse Voltage - 50 to 1000 Volts
GLASS PASSIVATED BRIDGE RECTIFIER
Forward Current - 10.0 Ampere
FEATURES
Glass passivated chip junction
●
Reliable low cost construction utilizing molded
plastic technique
●
Ideal for printed circuit board
●
Low reverse leakage current
●
Low forward voltage drop
●
High surge current capabiliy
●
GBJ
MECHANICAL DATA
●
●
Case:Molded plastic, GBJ
Terminals
:
Terminals: Leads solderable per MIL-STD-202
method 208 guaranteed
Epoxy: UL 94V-0 rate flame retardant
Mounting Position: Any
Dimensions in inches and (millimeters)
●
●
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current with
Heatsink at T
C
= 100
O
C
Peak Forward Surge Current, 8.3 ms Single Half-Sine
-Wave superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 5.0 A DC and 25
O
C
Maximum Reverse Current at T
A
= 25
O
C
at Rated DC Blocking Voltage T
A
= 125
O
C
Typical Junction Capacitance
Typical Thermal Resistance
2)
Operating and Storage Temperature Range
1)
2)
1)
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
,T
S
GBJ
10005
50
35
50
GBJ
1001
100
70
100
GBJ
1002
200
140
200
GBJ
1004
400
280
400
10
170
1.1
10
500
55
1.4
GBJ
1006
600
420
600
GBJ
1008
800
560
800
GBJ
Units
1010
1000
700
1000
V
V
V
A
A
V
µA
pF
O
C/W
O
-55 to +150
C
Measured at 1 MHz and applied reverse voltage of 4 VDC.
Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate
heatsink.
GBJ10005 THRU GBJ1010
RATINGS AND CHARACTERISTIC CURVES
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
12
10
I
O
, AVERAGE RECTIFIED CURRENT (A)
10
8
with heatsink
1.0
T
J
= 25
°
C
6
4
2
without heatsink
Resistive or
Inductive load
0.1
Pulse width = 300
µ
s
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0
0.4
0.8
1.2
1.6
1.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
180
I
FSM
, PEAK FWD SURGE CURRENT (A)
T
J
= 150
°
C
120
C
j
, JUNCTION CAPACITANCE (pF)
160
Single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1MHz
80
10
40
0
1
10
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (
µ
A)
1000
T
J
= 150
°
C
100
T
J
= 125
°
C
T
J
= 100
°
C
10
1.0
T
J
= 25
°
C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
