Low-power dual 2-input NAND gate; open drain
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | NXP(恩智浦) |
零件包装代码 | SON |
包装说明 | 3 X 2 MM, 0.50 MM HEIGHT, PLASTIC, SOT996-2, SON-8 |
针数 | 8 |
Reach Compliance Code | unknow |
系列 | AUP/ULP/V |
JESD-30 代码 | R-PDSO-N8 |
长度 | 3 mm |
逻辑集成电路类型 | NAND GATE |
湿度敏感等级 | 1 |
功能数量 | 2 |
输入次数 | 2 |
端子数量 | 8 |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
输出特性 | OPEN-DRAIN |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | VSON |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, VERY THIN PROFILE |
峰值回流温度(摄氏度) | 260 |
传播延迟(tpd) | 24 ns |
认证状态 | Not Qualified |
座面最大高度 | 0.5 mm |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 0.8 V |
标称供电电压 (Vsup) | 1.1 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | AUTOMOTIVE |
端子形式 | NO LEAD |
端子节距 | 0.5 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 30 |
宽度 | 2 mm |
Base Number Matches | 1 |
74AUP2G38GD | 74AUP2G38GT | 74AUP2G38 | 74AUP2G38DC | 74AUP2G38GM | |
---|---|---|---|---|---|
描述 | Low-power dual 2-input NAND gate; open drain | Low-power dual 2-input NAND gate; open drain | Low-power dual 2-input NAND gate; open drain | Low-power dual 2-input NAND gate; open drain | Low-power dual 2-input NAND gate; open drain |
是否Rohs认证 | 符合 | 符合 | - | 符合 | 符合 |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | - | NXP(恩智浦) | NXP(恩智浦) |
零件包装代码 | SON | SON | - | TSSOP | QFN |
包装说明 | 3 X 2 MM, 0.50 MM HEIGHT, PLASTIC, SOT996-2, SON-8 | 1 X 1.95 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT833-1, SON-8 | - | 2.30 MM, PLASTIC, MO-187, SOT765-1, VSSOP-8 | 1.60 X 1.60 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT902-1, QFN-8 |
针数 | 8 | 8 | - | 8 | 8 |
Reach Compliance Code | unknow | compli | - | compli | compli |
系列 | AUP/ULP/V | AUP/ULP/V | - | AUP/ULP/V | AUP/ULP/V |
JESD-30 代码 | R-PDSO-N8 | R-PDSO-N8 | - | R-PDSO-G8 | S-PBCC-B8 |
长度 | 3 mm | 1.95 mm | - | 2.3 mm | 1.6 mm |
逻辑集成电路类型 | NAND GATE | NAND GATE | - | NAND GATE | NAND GATE |
湿度敏感等级 | 1 | 1 | - | 1 | 1 |
功能数量 | 2 | 2 | - | 2 | 2 |
输入次数 | 2 | 2 | - | 2 | 2 |
端子数量 | 8 | 8 | - | 8 | 8 |
最高工作温度 | 125 °C | 125 °C | - | 125 °C | 125 °C |
最低工作温度 | -40 °C | -40 °C | - | -40 °C | -40 °C |
输出特性 | OPEN-DRAIN | OPEN-DRAIN | - | OPEN-DRAIN | OPEN-DRAIN |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | VSON | VSON | - | VSSOP | BCC |
封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | SQUARE |
封装形式 | SMALL OUTLINE, VERY THIN PROFILE | SMALL OUTLINE, VERY THIN PROFILE | - | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | CHIP CARRIER |
峰值回流温度(摄氏度) | 260 | 260 | - | 260 | 260 |
传播延迟(tpd) | 24 ns | 24 ns | - | 24 ns | 24 ns |
认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
座面最大高度 | 0.5 mm | 0.5 mm | - | 1 mm | 0.5 mm |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | - | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 0.8 V | 0.8 V | - | 0.8 V | 0.8 V |
标称供电电压 (Vsup) | 1.1 V | 1.1 V | - | 1.1 V | 1.1 V |
表面贴装 | YES | YES | - | YES | YES |
技术 | CMOS | CMOS | - | CMOS | CMOS |
温度等级 | AUTOMOTIVE | AUTOMOTIVE | - | AUTOMOTIVE | AUTOMOTIVE |
端子形式 | NO LEAD | NO LEAD | - | GULL WING | BUTT |
端子节距 | 0.5 mm | 0.5 mm | - | 0.5 mm | 0.55 mm |
端子位置 | DUAL | DUAL | - | DUAL | BOTTOM |
处于峰值回流温度下的最长时间 | 30 | 30 | - | 30 | 30 |
宽度 | 2 mm | 1 mm | - | 2 mm | 1.6 mm |
Base Number Matches | 1 | 1 | - | 1 | 1 |
负载电容(CL) | - | 30 pF | - | 30 pF | 30 pF |
最大I(ol) | - | 0.0017 A | - | 0.0017 A | 0.0017 A |
封装等效代码 | - | SOLCC8,.04,20 | - | TSSOP8,.12,20 | LCC8,.06SQ,20 |
包装方法 | - | TAPE AND REEL | - | TAPE AND REEL | TAPE AND REEL |
电源 | - | 1.2/3.3 V | - | 1.2/3.3 V | 1.2/3.3 V |
Prop。Delay @ Nom-Su | - | 24 ns | - | 24 ns | 24 ns |
施密特触发器 | - | NO | - | NO | NO |
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