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74AUP1T57

产品描述Low-power configurable gate with voltage-level translator
文件大小75KB,共17页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
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74AUP1T57概述

Low-power configurable gate with voltage-level translator

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74AUP1T57
Low-power configurable gate with voltage-level translator
Rev. 02 — 3 August 2009
Product data sheet
1. General description
The 74AUP1T57 provides low-power, low-voltage configurable logic gate functions. The
output state is determined by eight patterns of 3-bit input. The user can choose the logic
functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected
to V
CC
or GND.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 2.3 V to 3.6 V.
The 74AUP1T57 is designed for logic-level translation applications with input switching
levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single
2.5 V or 3.3 V supply voltage.
The wide supply voltage range ensures normal operation as battery voltage drops from
3.6 V to 2.3 V.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across the
entire V
CC
range.
2. Features
I
Wide supply voltage range from 2.3 V to 3.6 V
I
High noise immunity
I
ESD protection:
N
HBM JESD22-A114E Class 3A exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101C exceeds 1000 V
I
Low static power consumption; I
CC
= 1.5
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C

74AUP1T57相似产品对比

74AUP1T57 74AUP1T57GM 74AUP1T57GF 74AUP1T57GW
描述 Low-power configurable gate with voltage-level translator Low-power configurable gate with voltage-level translator Low-power configurable gate with voltage-level translator Low-power configurable gate with voltage-level translator
Source Url Status Check Date - 2013-06-14 00:00:00 2013-06-14 00:00:00 2013-06-14 00:00:00
是否无铅 - 不含铅 不含铅 不含铅
是否Rohs认证 - 符合 符合 符合
厂商名称 - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 - SON SON SOT-363
包装说明 - 1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, SON-6 1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, SON-6 PLASTIC, SOT-363, SC-88, 6 PIN
针数 - 6 6 6
Reach Compliance Code - compli compli compli
系列 - AUP/ULP/V AUP/ULP/V AUP/ULP/V
JESD-30 代码 - R-PDSO-N6 S-PDSO-N6 R-PDSO-G6
JESD-609代码 - e3 e3 e3
长度 - 1.45 mm 1 mm 2 mm
负载电容(CL) - 30 pF 30 pF 30 pF
逻辑集成电路类型 - MAJORITY LOGIC GATE MAJORITY LOGIC GATE MAJORITY LOGIC GATE
最大I(ol) - 0.0027 A 0.0027 A 0.0027 A
湿度敏感等级 - 1 1 1
功能数量 - 1 1 1
输入次数 - 3 3 3
端子数量 - 6 6 6
最高工作温度 - 125 °C 125 °C 125 °C
最低工作温度 - -40 °C -40 °C -40 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - VSON VSON TSSOP
封装等效代码 - SOLCC6,.04,20 SOLCC6,.04,14 TSSOP6,.08
封装形状 - RECTANGULAR SQUARE RECTANGULAR
封装形式 - SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法 - TAPE AND REEL TAPE AND REEL TAPE AND REEL
峰值回流温度(摄氏度) - 260 260 260
电源 - 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V
Prop。Delay @ Nom-Su - 11.9 ns 11.9 ns 11.9 ns
传播延迟(tpd) - 11.9 ns 11.9 ns 11.9 ns
认证状态 - Not Qualified Not Qualified Not Qualified
施密特触发器 - YES YES YES
座面最大高度 - 0.5 mm 0.5 mm 1.1 mm
最大供电电压 (Vsup) - 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) - 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) - 3 V 3 V 3 V
表面贴装 - YES YES YES
技术 - CMOS CMOS CMOS
温度等级 - AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 - Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 - NO LEAD NO LEAD GULL WING
端子节距 - 0.5 mm 0.35 mm 0.65 mm
端子位置 - DUAL DUAL DUAL
处于峰值回流温度下的最长时间 - 30 30 30
宽度 - 1 mm 1 mm 1.25 mm
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