74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
Rev. 03 — 2 July 2009
Product data sheet
1. General description
The 74AUP1G386 provides a single 3-input EXCLUSIVE-OR gate.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
Complies with JEDEC standards:
N
JESD8-12 (0.8 V to 1.3 V)
N
JESD8-11 (0.9 V to 1.65 V)
N
JESD8-7 (1.2 V to 1.95 V)
N
JESD8-5 (1.8 V to 2.7 V)
N
JESD8-B (2.7 V to 3.6 V)
I
ESD protection:
N
HBM JESD22-A114E Class 3A exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP1G386GW
74AUP1G386GM
74AUP1G386GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SC-88
XSON6
XSON6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
4. Marking
Table 2.
Marking
Marking code
[1]
aH
aH
aH
Type number
74AUP1G386GW
74AUP1G386GM
74AUP1G386GF
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
3
6
A
B
C
mnb143
Y
4
1
3
6
=1
4
mnb145
Fig 1. Logic symbol
Fig 2. IEC logic symbol
A
B
Y
C
mnb144
Fig 3. Logic diagram
74AUP1G386_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 2 July 2009
2 of 16
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
6. Pinning information
6.1 Pinning
74AUP1G386
74AUP1G386
A
GND
1
2
6
5
C
GND
V
CC
B
B
3
001aad937
A
1
6
C
A
GND
74AUP1G386
1
2
3
6
5
4
C
V
CC
Y
2
5
V
CC
3
4
Y
B
4
Y
001aad939
001aad938
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT363
(SC-88)
Fig 5. Pin configuration SOT886
(XSON6)
Fig 6. Pin configuration SOT891
(XSON6)
6.2 Pin description
Table 3.
Symbol
A
GND
B
Y
V
CC
C
Pin description
Pin
1
2
3
4
5
6
Description
data input A
ground (0 V)
data input B
data output Y
supply voltage
data input C
7. Functional description
Table 4.
Input
A
L
L
L
L
H
H
H
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care.
Function table
[1]
Output
B
L
L
H
H
L
L
H
H
C
L
H
L
H
L
H
L
H
Y
L
H
H
L
H
L
L
H
74AUP1G386_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 2 July 2009
3 of 16
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
−50
−0.5
−50
[1]
Max
+4.6
-
+4.6
-
+4.6
±20
50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
−0.5
-
-
−50
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
°C
ns/V
74AUP1G386_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 2 July 2009
4 of 16
NXP Semiconductors
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OFF
∆I
OFF
I
CC
∆I
CC
C
I
C
O
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
−
0.6 V; I
O
= 0 A;
V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
1.7
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
0.5
40
-
-
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
pF
pF
V
CC
−
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
×
V
CC
-
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
V
V
74AUP1G386_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 2 July 2009
5 of 16
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