74AUP1G38
Low-power 2-input NAND gate (open drain)
Rev. 03 — 22 June 2009
Product data sheet
1. General description
The 74AUP1G38 provides the single 2-input NAND gate with open-drain output. The
output of the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
Complies with JEDEC standards:
N
JESD8-12 (0.8 V to 1.3 V)
N
JESD8-11 (0.9 V to 1.65 V)
N
JESD8-7 (1.2 V to 1.95 V)
N
JESD8-5 (1.8 V to 2.7 V)
N
JESD8-B (2.7 V to 3.6 V)
I
ESD protection:
N
HBM JESD22-A114E Class 3A exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
NXP Semiconductors
74AUP1G38
Low-power 2-input NAND gate (open drain)
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP1G38GW
74AUP1G38GM
74AUP1G38GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
Version
SOT353-1
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
4. Marking
Table 2.
Marking
Marking code
[1]
aB
aB
aB
Type number
74AUP1G38GW
74AUP1G38GM
74AUP1G38GF
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Y
1
2
A
Y 4
B
001aab717
1
2
A
&
4
B
001aab716
GND
001aab715
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
74AUP1G38_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 June 2009
2 of 15
NXP Semiconductors
74AUP1G38
Low-power 2-input NAND gate (open drain)
6. Pinning information
6.1 Pinning
74AUP1G38
74AUP1G38
A
B
1
2
GND
GND
3
001aaf532
A
5
V
CC
1
6
V
CC
A
B
74AUP1G38
1
2
3
6
5
4
V
CC
n.c.
Y
B
2
5
n.c.
3
4
Y
GND
4
Y
001aaf533
001aaf534
Transparent top view
Transparent top view
Fig 4.
Pin configuration
SOT353-1 (TSSOP5)
Fig 5.
Pin configuration SOT886
(XSON6)
Fig 6.
Pin configuration SOT891
(XSON6)
6.2 Pin description
Table 3.
Symbol
A
B
GND
Y
n.c.
V
CC
Pin description
Pin
TSSOP5
1
2
3
4
-
5
XSON6
1
2
3
4
5
6
data input
data input
ground (0 V)
data output
not connected
supply voltage
Description
7. Functional description
Table 4.
Input
A
L
L
H
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF state.
Function table
[1]
Output
B
L
H
L
H
Y
Z
Z
Z
L
74AUP1G38_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 June 2009
3 of 15
NXP Semiconductors
74AUP1G38
Low-power 2-input NAND gate (open drain)
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
−50
−0.5
−50
[1]
Max
+4.6
-
+4.6
-
+4.6
+20
+50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
< 0 V
Active mode and Power-down mode
V
O
= 0 V to V
CC
−0.5
-
-
−50
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode and Power-down mode
Conditions
Min
0.8
0
0
−40
0
Max
3.6
3.6
3.6
+125
200
Unit
V
V
V
°C
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
V
V
74AUP1G38_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 June 2009
4 of 15
NXP Semiconductors
74AUP1G38
Low-power 2-input NAND gate (open drain)
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
OL
LOW-level output voltage
Conditions
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OZ
input leakage current
OFF-state output current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= V
IH
or V
IL
(and at least one input
LOW); V
O
= 0 V to 3.6 V; V
CC
= 0 V to
3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
I
= V
CC
−
0.6 V; I
O
= 0 A; V
CC
= 3.3 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
output enabled; V
O
= GND; V
CC
= 0 V
output disabled; V
O
= GND; V
CC
= 0 V
T
amb
=
−40 °C
to +85
°C
V
IH
HIGH-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-level input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
74AUP1G38_3
Min
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.1
Unit
V
V
V
V
V
V
V
V
µA
µA
I
OFF
∆I
OFF
I
CC
∆I
CC
C
I
C
O
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
input capacitance
output capacitance
-
-
-
-
-
-
-
-
-
-
-
0.8
1.7
1.1
±0.2
±0.2
0.5
40
-
-
-
-
-
-
-
µA
µA
µA
µA
pF
pF
pF
V
V
V
V
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
0.1
0.3
×
V
CC
0.37
0.35
0.33
0.45
0.33
0.45
±0.5
V
V
V
V
V
V
V
V
V
V
µA
input leakage current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 June 2009
5 of 15
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
