PD- 93814A
SMPS MOSFET
Applications
l
High frequency DC-DC converters
IRFR13N20D
IRFU13N20D
HEXFET
®
Power MOSFET
V
DSS
200V
R
DS(on)
max
0.235Ω
I
D
13A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR13N20D
I-Pak
IRFU13N20D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
13
9.2
52
110
0.71
± 30
2.2
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
Telecom 48V input Forward Converters
Notes
through
are on page 10
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1
2/14/00
IRFR13N20D/IRFU13N20D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
200 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.25 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.235
Ω
V
GS
= 10V, I
D
= 8.0A
3.0
––– 5.5
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
V
DS
= 200V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
6.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
25
7.3
12
11
27
17
10
830
140
35
990
57
59
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 7.8A
38
I
D
= 7.8A
11
nC
V
DS
= 160V
18
V
GS
= 10V,
–––
V
DD
= 100V
–––
I
D
= 7.8A
ns
–––
R
G
= 6.8Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
130
7.8
11
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
–––
–––
Min. Typ. Max. Units
Max.
1.4
50
110
Units
°C/W
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
13
––– –––
showing the
A
G
integral reverse
52
––– –––
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 7.8A, V
GS
= 0V
––– 140 210
ns
T
J
= 25°C, I
F
= 7.8A
––– 750 1120 nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFR13N20D/IRFU13N20D
100
VGS
TOP
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
10
1
6.0V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
I
D
= 13A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 175
°
C
10
2.0
T
J
= 25
°
C
1
1.5
1.0
0.5
0.1
5
6
7
8
V DS = 50V
20µs PULSE WIDTH
9
10
11
12
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR13N20D/IRFU13N20D
10000
20
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
= 7.8A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
16
C, Capacitance(pF)
1000
Ciss
12
Coss
100
8
Crss
10
1
10
100
1000
4
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
10us
10
100us
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR13N20D/IRFU13N20D
14
V
DS
V
GS
R
G
R
D
12
D.U.T.
+
I
D
, Drain Current (A)
10
-
V
DD
8
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
6
4
2
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
P
DM
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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