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BZX55C4V3.TR

产品描述Zener Diode, 4.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35
产品类别分立半导体    二极管   
文件大小20KB,共1页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 全文预览

BZX55C4V3.TR概述

Zener Diode, 4.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35

BZX55C4V3.TR规格参数

参数名称属性值
厂商名称Fairchild
包装说明O-PALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-35
JESD-30 代码O-PALF-W2
元件数量1
端子数量2
最高工作温度200 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压4.3 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
最大电压容差5%
工作测试电流5 mA

文档预览

下载PDF文档
BZX55C 3V3 - BZX55C 33 Series
Discrete POWER & Signal
Technologies
BZX55C 3V3 - 33 Series Half Watt Zeners
Absolute Maximum Ratings*
Parameter
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 25°C
Surge Power**
TA = 25°C unless otherwise noted
Tolerance: C = 5%
Value
-65 to +200
+ 200
+ 230
500
4.0
30
Units
°C
°C
°C
mW
mW/°C
W
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
**
Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DO-35
Electrical Characteristics
Device
MIN
BZX55C 3V3
BZX55C 3V6
BZX55C 3V9
BZX55C 4V3
BZX55C 4V7
BZX55C 5V1
BZX55C 5V6
BZX55C 6V2
BZX55C 6V8
BZX55C 7V5
BZX55C 8V2
BZX55C 9V1
BZX55C 10
BZX55C 11
BZX55C 12
BZX55C 13
BZX55C 15
BZX55C 16
BZX55C 18
BZX55C 20
BZX55C 22
BZX55C 24
BZX55C 27
BZX55C 30
BZX55C 33
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
TA = 25°C unless otherwise noted
V
Z
(V)
MAX
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32.0
35.0
Z
Z
(Ω)
85
85
85
75
60
35
25
10
8.0
7.0
7.0
10
15
20
20
26
30
40
50
55
55
80
80
80
80
@
I
ZT
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Z
ZK
(Ω)
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
@
I
ZT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
@
I
R
(µA)
2.0
2.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@
I
R
(µA)
T
A
= 150°C
40
40
40
20
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
T
C
(%/°C)
- 0.060
- 0.055
- 0.050
- 0.040
- 0.020
+0.010
+0.025
+0.032
+0.040
+0.045
+0.048
+0.050
+0.055
+0.060
+0.065
0.070
0.070
0.075
0.075
0.080
0.080
0.080
0.085
0.085
0.085
I
ZM
(mA)
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
V
F
Foward Voltage = 1.0 V Maximum @ I
F
= 100 mA for all BZX 55 series
ã
1997 Fairchild Semiconductor Corporation

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