IRFP451: 产品描述Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC; 产品类别分立半导体晶体管; 文件大小39KB，共1页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRFP451概述

Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IRFP451规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
外壳连接	DRAIN
配置	SINGLE
最小漏源击穿电压	450 V
最大漏极电流 (Abs) (ID)	14 A
最大漏极电流 (ID)	14 A
最大漏源导通电阻	0.4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-247AC
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	180 W
最大脉冲漏极电流 (IDM)	56 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管元件材料	SILICON

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IRFP451相似产品对比

	IRFP451	IRFP9142	IRFP9242	IRFP9143	IRFP9241	IRFPF42	IRFP9141	IRFP441	IRFP9243	IRFP452
描述	Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 16A I(D), 100V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 10A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 16A I(D), 80V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 12A I(D), 150V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 4.3A I(D), 900V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 19A I(D), 80V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 8.8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 10A I(D), 150V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	compliant	compliant	unknown	unknown	compliant	compliant	compliant	unknow
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	450 V	100 V	200 V	80 V	150 V	900 V	80 V	450 V	150 V	500 V
最大漏极电流 (Abs) (ID)	14 A	16 A	10 A	16 A	12 A	4.3 A	19 A	8.1 A	10 A	12 A
最大漏极电流 (ID)	14 A	16 A	10 A	16 A	12 A	4.3 A	19 A	8.8 A	10 A	12 A
最大漏源导通电阻	0.4 Ω	3 Ω	0.7 Ω	3 Ω	0.5 Ω	3 Ω	2 Ω	0.85 Ω	0.7 Ω	0.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	N-CHANNEL	P-CHANNEL	N-CHANNEL	P-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	180 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W	180 W
最大脉冲漏极电流 (IDM)	56 A	64 A	40 A	64 A	48 A	27 A	76 A	35 A	40 A	48 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	-	EAR99	-	EAR99	EAR99
峰值回流温度（摄氏度）	-	NOT SPECIFIED	225	225	NOT SPECIFIED	NOT SPECIFIED	225	225	225	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	30	30	NOT SPECIFIED	NOT SPECIFIED	30	30	30	-

IRFP451

IRFP451概述

IRFP451规格参数

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IRFP451相似产品对比

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