SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF10350/D
The RF Line
Microwave Pulse
Power Transistor
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
•
Guaranteed Performance @ 1090 MHz
Output Power = 350 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Hermetically Sealed Package
•
Silicon Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input and Output Matching
•
Characterized using Mode–S Pulse Format
MRF10350
350 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355E–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T
C
= 25°C (1), (2)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
T
stg
T
J
Value
65
65
3.5
31
1590
9.1
–65 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
0.11
Unit
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case
θ
JC
measured
using Mode–S pulse train, 128
µs
burst 0.5
µs
on, 0.5
µs
off repeating at 6.4 ms interval.)
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1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 60 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage (I
C
= 60 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CB
= 36 Vdc, I
E
= 0)
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
65
65
3.5
—
—
—
—
—
—
—
—
25
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
h
FE
20
—
—
—
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(V
CC
= 50 Vdc, P
out
= 350 W Peak, f = 1090 MHz)
Collector Efficiency
(V
CC
= 50 Vdc, P
out
= 350 W Peak, f = 1090 MHz)
Load Mismatch
(V
CC
= 50 Vdc, P
out
= 350 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
G
PB
η
ψ
8.5
40
9.0
—
—
—
dB
%
No Degradation in Output Power
Z5
L1
D.U.T.
C2
C3
C4
+
+
-
C1
RF INPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
RF OUTPUT
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
µF
C4 — 100
µF,
100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε
r
= 2.55, 2 Oz. Copper
.094
.573
.589
.156
.083
.170
.395
.402
.616
.278
.394
.258 .170
.364
.095
.803
.838
.130
1.518 .571
.594 1.685
.159
.396
.100
.160
.382
.083
Figure 1. Test Circuit
REV 1
2
500
POUT , OUTPUT POWER (WATTS)
400
300
200
100
0
f = 1090 MHz
V
CC
= 50 V
Pulse = Mode-S
(1)
0
10
20
30
40
50
60
70
80
P
IN
, INPUT POWER (WATTS)
(1) 128
µs
burst 0.5
µs
on, 0.5
µs
off
(1)
repeating at 6.4 ms interval.
Figure 2. Output Power versus Input Power
1025
1050
1090
1125
f = 1150 MHz
Z
o
= 10
Ω
Z
in
1150
1125
1050
1090
Z
OL
*
f = 1025 MHz
P
OUT
= 350 W Pk
f
MHz
1025
1050
1090
1125
1150
Z
in
OHMS
1.92 + j3.80
2.44 + j3.92
3.55 + j3.02
4.11 + j2.27
4.13 + j1.35
V
CC
= 50 V
Z
OL
* (1)
OHMS
2.52 + j0.70
2.18 + j0.85
1.94 + j1.13
1.80 + j1.22
1.71 + j1.31
Z
OL
* is the conjugate of the optimum load
impedance into which the device operates at a
given output power voltage and frequency.
Figure 3. Series Equivalent Input/Output Impedances
REV 1
3
PACKAGE DIMENSIONS
–A–
M
U
1
Q
2 PL
0.76 (0.030)
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
H
J
K
M
N
Q
R
U
INCHES
MIN
MAX
0.890
0.910
0.375
0.395
0.190
0.210
0.145
0.155
0.055
0.065
0.120
0.130
0.003
0.006
0.185
0.215
45
_
REF
0.490
0.510
0.115
0.125
0.395
0.405
0.700 BSC
MILLIMETERS
MIN
MAX
22.61
23.11
9.53
10.03
4.83
5.33
3.69
3.93
1.40
1.65
3.05
3.30
0.08
0.15
4.70
5.46
45
_
REF
12.45
12.95
2.93
3.17
10.04
10.28
17.78 BSC
R
3
–B–
2
K
2 PL
D
J
H
–T–
SEATING
PLANE
N
E
C
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
CASE 355E–01
ISSUE B
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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