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IDT71V256SA20TP: 产品描述Cache SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28; 产品类别存储存储; 文件大小68KB，共6页; 制造商IDT (Integrated Device Technology)

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IDT71V256SA20TP概述

Cache SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

IDT71V256SA20TP规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	DIP
包装说明	DIP, DIP28,.3
针数	28
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	20 ns
I/O 类型	COMMON
JESD-30 代码	R-PDIP-T28
JESD-609代码	e0
长度	34.67 mm
内存密度	262144 bit
内存集成电路类型	CACHE SRAM
内存宽度	8
湿度敏感等级	1
功能数量	1
端口数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX8
输出特性	3-STATE
可输出	YES
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装等效代码	DIP28,.3
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	3.3 V
认证状态	Not Qualified
座面最大高度	4.57 mm
最大待机电流	0.002 A
最小待机电流	3 V
最大压摆率	0.085 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	20
宽度	7.62 mm

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LOW POWER

3.3V CMOS FAST SRAM

256K (32K x 8-BIT)

Integrated Device Technology, Inc.

IDT71V256SA

FEATURES

• Ideal for high-performance processor secondary cache

• Commercial (0° to 70°C) and Industrial (-40° to 85°C)

temperature options

• Fast access times:

— Commercial: 10/12/15/20ns

— Industrial: 15ns

• Low standby current (maximum):

— 2mA full standby

• Small packages for space-efficient layouts:

— 28-pin 300 mil SOJ

— 28-pin 300 mil plastic DIP (Commercial only)

— 28-pin TSOP Type I

• Produced with advanced high-performance CMOS

technology

• Inputs and outputs are LVTTL-compatible

• Single 3.3V(±0.3V) power supply

DESCRIPTION

The IDT71V256SA is a 262,144-bit high-speed static RAM

organized as 32K x 8. It is fabricated using IDT’s high-

performance, high-reliability CMOS technology.

The IDT71V256SA has outstanding low power character-

istics while at the same time maintaining very high perfor-

mance. Address access times of as fast as10 ns are ideal for

3.3V secondary cache in 3.3V desktop designs.

When power management logic puts the IDT71V256SA in

standby mode, its very low power characteristics contribute to

extended battery life. By taking

HIGH, the SRAM will

automatically go to a low power standby mode and will remain

in standby as long as

remains HIGH. Furthermore, under

full standby mode (

at CMOS level, f=0), power consump-

tion is guaranteed to always be less than 6.6mW and typically

will be much smaller.

The IDT71V256SA is packaged in 28-pin 300 mil SOJ, 28-

pin 300 mil plastic DIP, and 28-pin 300 mil TSOP Type I

packaging.

FUNCTIONAL BLOCK DIAGRAM

ADDRESS

DECODER

262,144 BIT

MEMORY ARRAY

GND

I/O

INPUT

DATA

CIRCUIT

I/O

I/O CONTROL

CONTROL

CIRCUIT

3101 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES

Integrated Device Technology, Inc.

MAY 1997

DSC-3101/04

IDT71V256SA20TP相似产品对比

	IDT71V256SA20TP	IDT71V256SA15PZI	IDT71V256SA15YI	IDT71V256SA15TP	IDT71V256SA10TP	IDT71V256SA12TP	IDT71V256SA12PZ
描述	Cache SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Cache SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28	Cache SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, SOJ-28	Cache SRAM, 32KX8, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Cache SRAM, 32KX8, 10ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Cache SRAM, 32KX8, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	DIP	TSOP	SOJ	DIP	DIP	DIP	TSOP
包装说明	DIP, DIP28,.3	0.300 INCH, TSOP1-28	0.300 INCH, SOJ-28	0.300 INCH, PLASTIC, DIP-28	DIP, DIP28,.3	DIP, DIP28,.3	0.300 INCH, TSOP1-28
针数	28	28	28	28	28	28	28
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	_compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	20 ns	15 ns	15 ns	15 ns	10 ns	12 ns	12 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDIP-T28	R-PDSO-G28	R-PDSO-J28	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28	R-PDSO-G28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
长度	34.67 mm	11.8 mm	17.9324 mm	34.67 mm	34.67 mm	34.67 mm	11.8 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	TSOP1	SOJ	DIP	DIP	DIP	TSOP1
封装等效代码	DIP28,.3	TSSOP28,.53,22	SOJ28,.34	DIP28,.3	DIP28,.3	DIP28,.3	TSSOP28,.53,22
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.57 mm	1.2 mm	3.556 mm	4.57 mm	4.57 mm	4.57 mm	1.2 mm
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
最小待机电流	3 V	3 V	3 V	3 V	3 V	3 V	3 V
最大压摆率	0.085 mA	0.085 mA	0.085 mA	0.085 mA	0.1 mA	0.09 mA	0.09 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	YES	YES	NO	NO	NO	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
端子形式	THROUGH-HOLE	GULL WING	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子节距	2.54 mm	0.55 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	0.55 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	7.62 mm	8 mm	7.5184 mm	7.62 mm	7.62 mm	7.62 mm	8 mm
湿度敏感等级	1	3	3	-	1	1	3
峰值回流温度（摄氏度）	240	240	225	-	240	240	240
处于峰值回流温度下的最长时间	20	20	30	-	20	20	20

IDT71V256SA20TP

IDT71V256SA20TP概述

IDT71V256SA20TP规格参数

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