Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM7350
FEATURES
100V, 2.6A, R
DS(ON)
= 190mΩ @V
GS
= 10V.
-100V, -2.0A, R
DS(ON)
= 320mΩ @V
GS
= -10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D
1
8
D
1
7
D
2
6
D
2
5
SO-8
1
1
S
1
2
G
1
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
N-Channel
100
P-Channel
-100
Units
V
V
A
A
W
C
±
20
2.6
10
2.0
-55 to 150
±
20
-2.0
-8.0
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
2008.October
1
http://www.cetsemi.com
CEM7350
N-Channel Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= 1.8A
V
DS
= 80V, I
D
= 2.1A,
V
GS
= 10V
V
DD
= 50V, I
D
= 1A,
V
GS
= 10V, R
GEN
= 22Ω
14
8
28
6
9
1.5
2.8
1.8
1.3
28
16
56
12
12
ns
ns
ns
ns
nC
nC
nC
A
V
C
iss
C
oss
C
rss
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
435
95
25
pF
pF
pF
c
T
A
= 25 C unless otherwise noted
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2.1A
2
150
Min
100
1
100
-100
4
190
Typ
Max
Units
V
µA
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
5
nA
nA
V
mΩ
Gate Threshold Voltage
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM7350
P-Channel Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
d
c
T
A
= 25 C unless otherwise noted
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V, I
D
= -1.5A
-2
250
575
115
30
15
11
57
20
V
DS
= -80V, I
D
= -1.5A,
V
GS
= -10V
14
2.5
5.0
-1.4
V
GS
= 0V, I
S
= -1.4A
-1.6
30
22
114
40
18
Min
-100
-1
100
-100
-4
320
Typ
Max
Units
V
µA
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Gate Threshold Voltage
V
DS
= -25V, V
GS
= 0V,
f = 1.0 MHz
V
DD
= -50V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 22Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
3
N-CHANNEL
2.5
2.0
1.5
1.0
0.5
0
V
GS
=10,7,6,5,V
CEM7350
5
4
3
2
25 C
1
T
J
=125 C
-55 C
4
6
8
10
0
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5
V
GS
=4V
0
2
4
6
8
10
0
2
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
600
500
400
300
200
100
0
Coss
Crss
0
5
10
15
20
25
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=2.1A
V
GS
=10V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
I
S
, Source-drain current (A)
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
P-CHANNEL
3.0
2.5
2.0
1.5
1.0
0.5
0
V
GS
=10,9,8,7,6V
CEM7350
5
25 C
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
4
3
2
1
T
J
=125 C
-55 C
4
6
8
10
0
V
GS
=5V
V
GS
=4V
0
1
2
3
4
5
6
0
2
-V
DS
, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
900
750
600
450
300
150
0
Coss
Crss
0
5
10
15
20
25
30
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-V
GS
, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
I
D
=-1.5A
V
GS
=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
-I
S
, Source-drain current (A)
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=-250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
-V
SD
, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
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