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SMBJP6KE110CE3TR

产品描述Trans Voltage Suppressor Diode, 600W, 89.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN
产品类别分立半导体    二极管   
文件大小216KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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SMBJP6KE110CE3TR概述

Trans Voltage Suppressor Diode, 600W, 89.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

SMBJP6KE110CE3TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-214AA
包装说明R-PDSO-C2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压121 V
最小击穿电压99 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性BIDIRECTIONAL
最大功率耗散1.38 W
最大重复峰值反向电压89.2 V
表面贴装YES
技术AVALANCHE
端子形式C BEND
端子位置DUAL

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SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and
SMBGP6KE6.8 thru SMBGP6KE200CA, e3
SCOTTSDALE DIVISION
600 Watt TRANSIENT VOLTAGE
SUPPRESSOR
APPEARANCE
DESCRIPTION
This SMBJP6KE and SMBGP6KE series is an economical surface mount version of
the popular P6KE axial-leaded series of 600 W Transient Voltage Suppressors
(TVSs). It is available in both unidirectional and bi-directional configurations for
protecting voltage-sensitive components from destruction or degradation. Response
time of clamping action is virtually instantaneous. As a result, they may also be used
effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for
inductive switching environments and induced RF. They can also be used for
protecting other sensitive components from secondary lightning effects per IEC61000-
4-5 and class levels defined herein. Microsemi also offers numerous other TVS
products to meet higher and lower power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
WWW .
Microsemi
.C
OM
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
FEATURES
Economical TVS series for surface mount
Available in both unidirectional and bidirectional
(add C or CA suffix to part number for bidirectional)
Selections for 6.8 to 200 volts breakdown (V
BR
)
Fast response
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
o
o
100% temperature cycle -55 C to +125 C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
Z
&
I
R
(in the operating direction for unidirectional or both
directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available by
adding MQ, MX, or MV prefixes respectively to part
numbers.
Axial-lead (thru-hole) equivalents available as P6KE6.8
to P6KE200CA (consult factory for other options)
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding an “e3”
suffix.
APPLICATIONS / BENEFITS
Suppresses transients up to 600 watts @ 10/1000
µs (see Figure 1)
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: SMBJ(G)P6KE6.8 to 130A or CA
Class 2: SMBJ(G)P6KE6.8 to 68A or CA
Class 3: SMBJ(G)P6KE6.8 to 36A or CA
Class 4: SMBJ(G)P6KE6.8 to 18A or CA
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: SMBJ(G)P6KE6.8 to 43A or CA
Class 2: SMBJ(G)P6KE6.8 to 22A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
o
C: 600 watts at
10/1000
μs
(also see Fig 1,2, and 3).
Impulse repetition rate (duty factor): 0.01%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
o
C to +150
o
C
º
º
Thermal resistance: 25 C/W junction to lead, or 90 C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C, or
1.38 watts at T
A
= 25
º
C when mounted on FR4 PC board
with recommended footprint
o
Forward Voltage at 25 C: 3.5 Volts maximum @ 50 Amp
peak impulse of 8.3 ms half-sine wave (unidirectional
only)
Solder temperatures: 260
o
C for 10 s (maximum)
Copyright
©
2007
6-21-2007 Rev C
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead plated or RoHS Compliant
annealed matte-tin plating over copper and readily
solderable per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. P6KE6.8A, P6KE6.8Ae3,
P6KE36, P6KE200CA, P6KE200CAe3, etc.
POLARITY: Band denotes cathode. Bidirectional
not marked
WEIGHT: 0.1 grams (approximate)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
See package dimensions on last page
SMBJ(G)P6KE6.8-200Ae3
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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