PJSD03W~PJSD36W
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 350 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
3~36 Volts
POWER
350 Watts
APPLICATIONS
• Case: SOD-323 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Polarity : Color band cathode
• Apporx. Weight: 0.0001 ounce, 0.0041 gram
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20
μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P
PK
V
ESD
T
J
T
STG
Value
350
25
-50 to 150
-50 to 150
Units
W
KV
O
C
C
O
August 12.2010-Rev.00
PAGE . 1
PJSD03W~PJSD36W
PJSD03W Marking 03W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD05W Marking 05W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD08W Marking 08W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD12W Marking 12W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=12V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
-
Typical
-
-
-
-
130
50
Max.
12
15
1
19
-
-
Units
V
V
μA
V
pF
pF
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.0V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
450
150
Max.
3.0
5.0
125
6.5
-
-
Units
V
V
μA
V
pF
pF
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=5V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6
-
-
-
-
Typical
-
-
-
-
300
100
Max.
5
7.2
10
9.8
-
-
Units
V
V
μA
V
pF
pF
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=8V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
-
Typical
-
-
-
-
150
80
Max.
8
10
10
13.4
-
-
Units
V
V
μA
V
pF
pF
August 12.2010-Rev.00
PAGE . 2
PJSD03W~PJSD36W
PJSD15W Marking 15W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD24W Marking 24W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
PJSD36W Marking 36W
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=36V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
39.9
-
-
-
-
Typical
-
-
-
-
30
1
Max.
36
45
1
60
-
-
Units
V
V
μA
V
pF
pF
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=24V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
26.6
-
-
-
-
Typical
-
-
-
-
80
10
Max.
24
30
1
43
-
-
Units
V
V
μA
V
pF
pF
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=15V
I
PP
=1A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
16.7
-
-
-
-
Typical
-
-
-
-
120
30
Max.
15
20
1
24
-
-
Units
V
V
μA
V
pF
pF
August 12.2010-Rev.00
PAGE . 3
PJSD03W~PJSD36W
I
PP
-Peak Pulse Current-% of I
PP
120
t
f
100
80
e
60
40
20
0
0
5
10
t
d
=t I
PP
/2
-t
100
Peak Value I
PP
TEST
t
f = 8
m
s
t
d = 2 0
m
s
WAVEFORM
PARAMETERS
%Of Rated Power
80
60
40
20
0
Peak Pulse Power
8/20
m
s
Average Power
0
25
50
75
100
125 150
O
15
T-Time-
m
s
20
25
30
T
L
-Lead Temperature- C
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
P
PP
-Peak Pulse Current-Watts
10000
1000
100
320W,8/20
m
s Waveform
10
0.01
1
10
100
1000
10000
t
d
-Pulse Duration-
m
s
FIG. 3-Peak Pulse Power vs Pulse Time
400
C-C apa cita nce -pF
300
200
100
0
0
1
2
3
4
5
6
V
R
=Reverse Voltage-Volts
FIG. 4-Typical Reverse Voltage vs Capacitance
August 12.2010-Rev.00
PAGE . 4
PJSD03W~PJSD36W
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
August 12.2010-Rev.00
PAGE . 5
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
