Bulletin I27091 rev.A 09/97
IRK.F112.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
RMS
isolating voltage
Industrial standard package
UL E78996 approved
112 A
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
t
q
t
rr
V
DRM
/ V
RRM
T
J
range
IRK.F112..
112
90
250
3090
3237
47.8
43.6
478
10 and 15
2
up to 800
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
µs
µs
V
o
C
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1
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
08
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
400
800
V
RSM
, maximum non-
repetitive peak rev. voltage
V
400
800
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
30
IRK.F112.. Series
Current Carrying Capacity
I
TM
180
o
el
50Hz
400Hz
2500Hz
5000Hz
10000Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
90
220
285
205
175
125
50
80% V
DRM
50
60
-
90
220
285
205
170
120
50
180
o
el
350
425
350
295
230
50
550
695
550
448
337
50
80% V
DRM
-
60
-
90
I
TM
100µs
2060
1230
460
295
-
50
80% V
DRM
-
60
2900
1785
552
448
-
50
A
A
A
A
A
V
V
A/µ s
°C
I
TM
Frequency f
Units
47
Ω
/ 0.22 µF
47
Ω
/ 0.22 µF
47
Ω
/ 0.22 µF
On-state Conduction
Parameter
I
T(AV)
I
T(RMS)
I
TSM
Maximum average on-state current
@ Case temperature
Maximum RMS current
Maximum peak, one-cycle,
non-repetitive surge current
IRK.F112..
112
90
250
3090
3237
2600
2720
Units Conditions
A
°C
A
A
T
C
= 90°C, as AC switch
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
2
180° conduction, half sine wave
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= 125°C
I
2
t
Maximum I
2
t for fusing
47.8
43.6
33.8
30.8
I
√t
2
Maximum I
√t
for fusing
2
478
1.19
1.43
1.67
1.12
1.77
600
1000
KA
√s
t = 0 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mW
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
mA
mA
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, Ig = 1A
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
2
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Switching
Parameter
di/dt
Maximum non-repetitive rate of rise
IRK.F112..
800
Units Conditions
A/µs
Gate drive 20V, 20Ω, tr
≤
1ms, V
D
= 80% V
DRM
T
J
= 125°C
I
TM
= 350A, di/dt = -25A/µs, V
R
= 50V, T
J
= 25°C
I
TM
= 350A, T
J
= 125°C, di/dt = -25A/µs,
µs
V
R
= 50V, dv/dt = 400V/µs linear to 80% V
DRM
t
rr
Maximum recovery time
Maximum turn-off time
N
10
2
L
15
µs
t
q
Blocking
Parameter
dv/dt
Maximum critical rate of rise of off-state
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
3000
30
V
mA
50 Hz, circuit to base, T
J
= 25°C, t = 1 s
T
J
= 125°C, rated V
DRM
/V
RRM
applied
IRK.F112..
1000
Units Conditions
V/µs
T
J
= 125°C., exponential to 67% V
DRM
Triggering
Parameter
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.F112..
60
10
10
5
200
3
20
0.25
Units Conditions
W
W
A
V
mA
V
mA
V
T
J
= 125°C, rated V
DRM
applied
T
J
= 25°C, V
ak
12V, Ra = 6
f = 50 Hz, d% = 50
T
J
= 125°C, f = 50Hz, d% = 50
T
J
= 125°C, t
p
< 5ms
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to
case
R
thC-hs
Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10%
IAP to heatsink
busbar to IAP
wt
Approximate weight
4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
Nm
0.035
K/W
Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
(lb*in)
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz)
lubricated with a compound
IRK.F112..
- 40 to 125
- 40 to 150
0.17
Units Conditions
°C
K/W
Per junction, DC operation
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3
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
∆R
thJC
Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
0.015
0.018
0.024
0.036
0.060
0.012
0.020
0.027
0.037
0.060
Units
K/W
Conditions
T
J
= 125°C
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
- Module type
- Circuit configuration
- Fast SCR
T
2
F
3
11
4
2
5
-
08
6
H
7
L
8
N
9
- Current rating: I
T(AV)
x 10 rounded
- 1=
2=
option with spacers and longer terminal screws
option with standard terminal screws
6
7
8
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
- dv/dt code: H
≤
400V/µs
- t
q
code: N
≤
10µs
L
≤
15µs
- None = Standard devices
N
= Aluminum nitrade substrate
9
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
IRK...1
IRK...2
A
25 (0.98)
23 (0.91)
B
----
30 (1.18)
C
----
36 (1.42)
D
41 (1.61)
----
E
47 (1.85)
----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
IRK.F112.. Series
R
thJC
(DC) = 0.17 K/W
120
130
120
110
Conduction Period
IRK.F112.. Series
R
thJC
(DC) = 0.17 K/W
110
Conduction Angle
100
90
80
70
0
40
80
120
160
200
Average On-state Current (A)
30°
60°
90°
120°
180°
DC
100
30°
60°
90
90°
120°
180°
80
0
20
40
60
80
100
120
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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