OM360NK OM10N100NK
OM460NK
POWER MOSFETS IN A TO-3 PACKAGE
400V Thru 1000V, N-Channel
Size 6 MOSFETs, High Energy Capability
FEATURES
•
•
•
•
•
TO-3 Package Hermetic, .060 Dia. Leads
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
OM360NK
OM460NK
OM10N100NK
V
DS
(V)
400
500
1000
R
DS(on)
( )
.20
.25
1.30
I
D
(A)
24
22
10
3.1
SCHEMATIC
Drain
Gate
Source
4 11 R1
Supersedes 3 12 R0
3.1 - 37
OM360NK - OM10N100NK
ELECTRICAL CHARACTERISTICS:
Characteristic
OM360NK
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 400 V, V
GS
= 0)
(V
DS
= 400 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSF
I
GSSR
V
(BR)DSS
I
DSS
-
-
-
-
-
-
-
-
0.25
1.0
100
100
nAdc
nAdc
400
-
-
Vdc
mAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 12 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 24 A)
(I
D
= 12 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12 Adc)
g
FS
R
DS(on)
V
DS(on)
-
-
14
-
-
-
5.4
5.4
-
mhos
V
GS(th)
2.0
1.5
-
3.0
-
-
4.0
3.5
0.20
Ohm
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 200 V, I
D
= 24 A,
R
gen
= 4.3 ohms)
(V
DS
= 320 V, I
D
= 24 A,
V
GS
= 10 V)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 24 A, d/dt = 100 A/µs)
t
on
t
rr
-
-
-
4000
550
110
-
-
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
30
95
80
80
110
22
46
-
-
-
-
-
-
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
-
-
-
1.1
1.6
-
1000
Vdc
ns
**
500
ELECTRICAL CHARACTERISTICS:
Characteristic
OM460NK
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 500 V, V
GS
= 0)
(V
DS
= 500 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSF
I
GSSR
V
GS(th)
2.0
1.5
R
DS(on)
V
DS(on)
-
-
g
FS
11
-
-
-
8.0
8.0
-
mhos
-
3.0
-
-
4.0
3.5
0.25
Ohm
Vdc
V
(BR)DSS
I
DSS
-
-
-
-
-
-
-
-
0.25
1.0
100
100
nAdc
nAdc
500
-
-
Vdc
mAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
Vdc
3.1
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 11 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 22 A)
(I
D
= 11 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 11 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 250 V, I
D
= 22 A,
R
gen
= 4.3 ohms)
(V
DS
= 400 V, I
D
= 22 A,
V
GS
= 10 V)
t
r
T
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 22 A, d/dt =100 A/µs)
t
on
t
rr
-
-
-
4000
480
95
-
-
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
32
95
80
80
115
22
46
-
-
-
-
-
-
-
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
-
-
-
1.1
1.6
-
1000
Vdc
ns
**
500
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%. ** Limited by circuit inductance
3.1 - 38
OM360NK - OM10N100NK
ELECTRICAL CHARACTERISTICS:
Characteristic
OM10N100NK
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 1000 V, V
GS
= 0)
(V
DS
= 1000 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSF
I
GSSR
V
GS(th)
2.0
1.5
R
DS(on)
V
DS(on)
-
-
g
FS
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 500 V, I
D
= 10 A,
R
gen
= 9.1 ohms)
(V
DS
= 500 V, I
D
= 10 A,
V
GS
= 10 V)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 10 A, d/dt = 100 A/µs)
t
on
t
rr
-
5.0
-
-
-
-
3.0
-
-
4.5
4.0
1.3
-
14
14
-
mhos
Ohm
Vdc
V
(BR)DSS
I
DSS
-
-
-
-
-
-
-
-
0.25
1.0
100
100
nAdc
nAdc
1000
-
-
Vdc
mAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 5 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 10 A)
(I
D
= 5 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5 Adc)
Vdc
DYNAMIC CHARACTERISTICS-
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
-
-
-
3900
300
65
-
-
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
40
60
100
70
100
20
40
-
-
-
-
-
-
-
nC
ns
3.1
Vdc
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
*
**
Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
Limited by circuit inductance
-
-
1.1
**
600
1000
3.1 - 39
OM360NK - OM10N100NK
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
DM
P
D
@ T
C
= 25°C
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Derate Above 25°C T
C
W
DSS
(1)
Single Pulse Energy
Drain To Source @ 25°C
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/8" from case for 5 secs.)
-55 to 150
275
-55 to 150
275
-55 to 150
275
°C
°C
1000
1200
1000
mJ
OM360NK
400
400
24
92
200
1.33
OM460NK
500
500
22
85
200
1.33
OM10N100NK
1000
1000
10
40
200
1.33
Units
V
V
A
A
W
W/°C
Note 1:
V
DD
= 50V, I
D
= as noted
THERMAL RESISTANCE
(Maximum) at T
A
= 25°C
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
Derate above 25°C T
A
.75
30
.
033
°C/W
°C/W
W/°C
Free Air Operation
MECHANICAL OUTLINE
3.1
1.53
REF.
0.875
MAX.
0.450
0.250
0.312
MIN.
0.063 2 PLCS.
0.058
Pin Connection
Pin 1: Gate
Pin 2: Source
Case: Drain
1.197
1.177
0.675
0.655
0.188 R.
MAX.
2
0.440
0.420
0.135
MAX.
SEATING
PLANE
0.225
0.205
0.161
0.151
1
0.525 R.
MAX.
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