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JANTXV1N966D-1

产品描述Zener Diode, 16V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,
产品类别分立半导体    二极管   
文件大小209KB,共28页
制造商Compensated Devices Inc
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JANTXV1N966D-1概述

Zener Diode, 16V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,

JANTXV1N966D-1规格参数

参数名称属性值
厂商名称Compensated Devices Inc
Reach Compliance Codeunknown
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-204AH
JESD-30 代码O-LALF-W2
湿度敏感等级1
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散0.48 W
认证状态Not Qualified
标称参考电压16 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差1%
工作测试电流7.8 mA

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 January 2006.
INCH-POUND
MIL-PRF-19500/117N
6 October 2005
SUPERSEDING
MIL-PRF-19500/117M
13 January 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH
1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1
THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided
for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for
each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and
as follows:
a. P
TL
= 500 mW, (DO-35) at T
L
= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175°C.
b. P
TEC
= 500 mW, (DO-213AA) at T
EC
= +125°C, derate to 0 at +175°C. -65°C
T
J
+175°C; -65°C
T
STG
+175°C.
c. P
T(PCB)
= 500 mW, T
A
= 75°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961

 
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