BUL45G
NPN Silicon Power
Transistor
High Voltage SWITCHMODE Series
Designed for use in electronic ballast (light ballast) and in
SWITCHMODE Power supplies up to 50 W.
Features
http://onsemi.com
Improved Efficiency Due to:
Low Base Drive Requirements (High and Flat DC Current Gain h
FE
)
Low Power Losses (On-
-State and Switching Operations)
Fast Switching: t
fi
= 100 ns (typ) and t
si
= 3.2
ms
(typ)
@ I
C
= 2.0 A, I
B1
= I
B2
= 0.4 A
Full Characterization at 125C
Tight Parametric Distributions Consistent Lot--to--Lot
These Devices are Pb--Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector--Emitter Sustaining Voltage
Collector--Base Breakdown Voltage
Emitter--Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25C
Operating and Storage Temperature
-- Continuous
-- Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
400
700
9.0
5.0
10
2.0
75
0.6
--65 to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTOR
5.0 AMPERES, 700 VOLTS,
35 AND 75 WATTS
TO-
-220AB
CASE 221A-
-09
STYLE 1
1
2
3
MARKING DIAGRAM
BUL45G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction--to--Case
Thermal Resistance, Junction--to--Ambient
Symbol
R
θJC
R
θJA
Max
1.65
62.5
Unit
_C/W
_C/W
BUL45
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb--Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
ORDERING INFORMATION
Device
BUL45G
Package
TO--220
(Pb--Free)
Shipping
50 Units / Rail
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
October, 2011 - Rev. 9
-
1
Publication Order Number:
BUL45/D
BUL45G
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector--Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
(T
C
= 125C)
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base--Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
(I
C
= 2.0 Adc, I
B
= 0.4 Adc)
Collector--Emitter Saturation Voltage (I
C
= 1.0 Adc, I
B
= 0.2 Adc)
(T
C
= 125C)
Collector--Emitter Saturation Voltage (I
C
= 2.0 Adc, I
B
= 0.4 Adc)
(T
C
= 125C)
DC Current Gain (I
C
= 0.3 Adc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 8.0 Vdc)
(I
C
= 1.0 Adc
I
B1
= 100 mAdc
V
CC
= 300 V)
(I
C
= 2.0 Adc
I
B1
= 400 mAdc
V
CC
= 300 V)
1.0
ms
3.0
ms
1.0
ms
3.0
ms
(T
C
= 125C)
(T
C
= 125C)
(T
C
= 125C)
(T
C
= 125C)
t
on
t
off
V
CE
(Dyn sat)
f
T
C
ob
C
ib
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
--
2.6
--
--
--
--
--
--
--
--
--
--
--
--
12
50
920
1.75
4.4
0.5
1.0
1.85
6.0
0.5
1.0
75
120
2.8
3.5
--
200
--
4.2
230
400
110
100
1.1
1.5
170
170
80
0.6
175
—
75
1200
--
--
--
--
--
--
--
--
110
--
3.5
--
170
--
3.8
--
350
--
150
--
1.7
--
250
--
120
0.9
300
ns
ms
MHz
pF
pF
(T
C
= 125C)
(T
C
= 125C)
V
BE(sat)
--
--
--
--
--
--
14
--
7.0
5.0
10
0.84
0.89
0.175
0.150
0.25
0.275
--
32
14
12
22
1.2
1.25
0.25
--
0.4
--
34
--
--
--
--
Vdc
V
CEO(sus)
I
CEO
I
CES
I
EBO
400
--
--
--
--
--
--
--
--
--
--
100
10
100
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
CE(sat)
h
FE
Vdc
Vdc
--
Dynamic Saturation Voltage:
Determined 1.0
ms
and 3.0
ms
respectively after rising I
B1
reaches 90% of final I
B1
(see Figure 18)
Vdc
SWITCHING CHARACTERISTICS: Resistive Load
Turn--On Time
Turn--Off Time
(I
C
= 2.0 Adc, I
B1
= I
B2
= 0.4 Adc
Pulse Width = 20
ms,
(T
C
= 125C)
Duty Cycle < 20% V
CC
= 300 V
(T
C
= 125C)
(I
C
= 2.0 Adc, I
B1
= 0.4 Adc
I
B2
= 0.4 Adc)
SWITCHING CHARACTERISTICS: Inductive Load
(V
CC
= 15 Vdc, L
C
= 200
mH,
V
clamp
= 300 Vdc)
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
(T
C
= 125C)
(T
C
= 125C)
(T
C
= 125C)
(I
C
= 1.0 Adc, I
B1
= 100 mAdc
(T
C
= 125C)
I
B2
= 0.5 Adc)
(T
C
= 125C)
(T
C
= 125C)
(I
C
= 2.0 Adc, I
B1
= 250 mAdc
(T
C
= 125C)
I
B2
= 2.0 Adc)
(T
C
= 125C)
(T
C
= 125C)
t
fi
t
si
t
c
t
fi
t
si
t
c
t
fi
t
si
t
c
ns
ms
ns
ns
ms
ns
ns
ms
ns
http://onsemi.com
2
BUL45G
TYPICAL STATIC CHARACTERISTICS
100
T
J
= 25C
T
J
= 125C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
T
J
= -- 20C
10
V
CE
= 1 V
T
J
= 125C
T
J
= -- 20C
10
100
T
J
= 25C
V
CE
= 5 V
1
0.01
0.10
1.00
10.00
1
0.01
0.10
1.00
10.00
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
2.0
10
Figure 2. DC Current Gain at @ 5 Volts
T
J
= 25C
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
1.5
1 A 1.5 2 A
A
3A
4A 5A
6A
1.0
1.0
0.1
I
C
/I
B
= 10
I
C
/I
B
= 5
T
J
= 25C
T
J
= 125C
0.10
1.00
10.00
0.5
I
C
= 0.5 A
0
0.01
0.10
1.00
10.00
0.01
0.01
I
B
, BASE CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-
-Emitter Saturation Region
Figure 4. Collector-
-Emitter Saturation Voltage
1.1
1.0
VBE , VOLTAGE (VOLTS)
10000
C
ib
T
J
= 25C
f = 1 MHz
0.8
0.7
0.6
0.5
0.4
0.01
0.10
1.00
T
J
= 25C
C, CAPACITANCE (pF)
0.9
1000
100
C
ob
T
J
= 125C
10
I
C
/I
B
= 10
I
C
/I
B
= 5
10.00
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
Figure 5. Base-
-Emitter Saturation Region
Figure 6. Capacitance
http://onsemi.com
3
BUL45G
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
1200
1000
800
600
400
200
0
0
1
2
3
4
5
6
I
C
/I
B
= 10
t, TIME (ns)
I
B(off)
= I
C
/2
V
CC
= 300 V
PW = 20
ms
3000
T
J
= 25C
T
J
= 125C
2500
2000
I
C
/I
B
= 10
1500
1000
500
8
0
0
1
2
3
4
5
6
7
8
I
C
/I
B
= 5
T
J
= 25C
T
J
= 125C
I
B(off)
= I
C
/2
V
CC
= 300 V
PW = 20
ms
t, TIME (ns)
I
C
/I
B
= 5
7
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, t
on
3500
3000
2500
t, TIME (ns)
2000
1500
1000
500
0
0
T
J
= 25C
T
J
= 125C
1
2
I
C
/I
B
= 5
V
Z
= 300 V
V
CC
= 15 V
I
B(off)
= I
C
/2
L
C
= 200
mH
3500
3000
t si , STORAGE TIME (ns)
2500
2000
1500
1000
I
C
/I
B
= 10
3
4
5
500
Figure 8. Resistive Switching, t
off
T
J
= 25C
T
J
= 125C
I
B(off)
= I
C
/2
L
C
= 200
mH
V
Z
= 300 V
V
CC
= 15 V
I
C
= 1 A
I
C
= 2 A
3
4
5
6
7
8
9
10
11
12
13
14
15
h
FE
, FORCED GAIN
I
C
, COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time, t
si
(h
FE
)
300
250
200
t, TIME (ns)
t, TIME (ns)
150
100
50
0
0
t
c
200
t
c
150
100
V
CC
= 15 V
I
B(off)
= I
C
/2
L
C
= 200
mH
V
Z
= 300 V
1
2
50
t
fi
3
T
J
= 25C
T
J
= 125C
4
5
0
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
0
1
2
t
fi
T
J
= 25C
T
J
= 125C
3
4
5
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, t
c
& t
fi
, I
C
/I
B
= 5
Figure 12. Inductive Switching, t
c
& t
fi
, I
C
/I
B
= 10
http://onsemi.com
4
BUL45G
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
150
140
130
t fi , FALL TIME (ns)
120
110
100
90
80
70
3
4
I
C
= 2 A
5
6
7
8
9
10
11
12
13
14
15
T
J
= 25C
T
J
= 125C
I
C
= 1 A
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
300
250
I
C
= 1 A
200
150
100
50
V
CC
= 15 V
V
Z
= 300 V
I
B(off)
= I
C
/2
L
C
= 200
mH
t c , CROSSOVER TIME (ns)
T
J
= 25C
T
J
= 125C
3
4
5
6
7
8
I
C
= 2 A
9
10
11
12
13
14
15
h
FE
, FORCED GAIN
h
FE
, FORCED GAIN
Figure 13. Inductive Fall Time, t
fi
(h
FE
)
Figure 14. Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
DC (BUL45)
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
10
5 ms
1 ms
50
ms
10
ms
1
ms
5
4
3
2
1
0
300
V
BE(off)
= 0 V
--1.5 V
800
--5 V
6
T
C
125C
I
C
/I
B
4
L
C
= 500
mH
1.0
EXTENDED
SOA
0.1
0.01
10
100
V
CE
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
1000
700
600
500
400
V
CE
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I
C
- V
CE
limits of the transistor
-
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate. The data of Figure 15 is based on T
C
= 25C; T
J(pk)
is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when
T
C
25C. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. T
J(pk)
may be calculated from the
data in Figures 20. At any case temperatures, thermal limitations
will reduce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive loads,
high voltage and current must be sustained simultaneously during
turn-
-off with the base- -emitter junction reverse-
-to-
-biased. The
safe level is specified as a reverse-
-biased safe operating area
(Figure 16). This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
1.0
POWER DERATING FACTOR
0.8
0.6
0.4
0.2
0
20
THERMAL DERATING
SECOND BREAKDOWN
DERATING
40
60
80
100
120
140
160
T
C
, CASE TEMPERATURE (C)
Figure 17. Forward Bias Power Derating
http://onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
