Datasheet> 器件分类 > 分立半导体> 晶体管> RN2424(TE85L)

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RN2424(TE85L): 产品描述TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小549KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2424(TE85L)概述

TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal

RN2424(TE85L)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
零件包装代码	SC-59
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.8 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	90
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz

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RN2421~RN2427

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2421,RN2422,RN2423,RN2424

RN2425,RN2426,RN2427

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

High current type (I

C(MAX)

−800mA)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1421~RN1427

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2421

RN2422

RN2423

RN2424

RN2425

RN2426

RN2427

R1 (kΩ)

2.2

4.7

0.47

2.2

R2 (kΩ)

2.2

4.7

JEDEC

JEITA

TOSHIBA

―

SC-59

2-3F1A

Weight: 0.012 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-Base voltage

Collector-Emitter voltage

RN2421~2427

RN2421~2424

Emitter-Base voltage

RN2425, 2426

RN2427

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2421~2427

stg

EBO

Symbol

CBO

CEO

Rating

−50

−10

−5

−6

−800

200

150

−55~150

°C

Unit

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

RN2424(TE85L)相似产品对比

	RN2424(TE85L)	RN2424(TE85L2)	RN2424(TE85R)	RN2424(TE85R2)
描述	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
零件包装代码	SC-59	SC-59	SC-59	SC-59
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.8 A	0.8 A	0.8 A	0.8 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	90	90	90	90
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	200 MHz

RN2424(TE85L)

RN2424(TE85L)概述

RN2424(TE85L)规格参数

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RN2424(TE85L)相似产品对比

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