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RN1111F(F)

产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
产品类别分立半导体    晶体管   
文件大小282KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN1111F(F)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

RN1111F(F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)120
元件数量1
极性/信道类型NPN
最大功率耗散 (Abs)0.1 W
表面贴装YES
晶体管元件材料SILICON

文档预览

下载PDF文档
RN1110F,RN1111F
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1110F,RN1111F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2110F, RN2111F
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
T
j
T
stg
Rating
50
50
5
100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1110F
RN1111F
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
120
3.29
7
Typ.
0.1
250
3
4.7
10
Max
100
100
700
0.3
6
6.11
13
Unit
nA
nA
V
MHz
pF
kΩ
R1
1
2007-11-01

RN1111F(F)相似产品对比

RN1111F(F) RN1111F(TPL3) RN1110F(TPL3) RN1110F(F) RN1110F(TE85L,F) RN1110F(TPL3,F)
描述 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR RN1111F(TPL3) RN1110F(TPL3) PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
厂商名称 Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
Reach Compliance Code unknown unknown unknown unknown unknown unknown
是否Rohs认证 符合 - - 符合 符合 符合
最大集电极电流 (IC) 0.1 A - - 0.1 A 0.1 A 0.1 A
最小直流电流增益 (hFE) 120 - - 120 120 120
元件数量 1 - - 1 1 1
极性/信道类型 NPN - - NPN NPN NPN
最大功率耗散 (Abs) 0.1 W - - 0.1 W 0.1 W 0.1 W
表面贴装 YES - - YES YES YES
晶体管元件材料 SILICON - - SILICON SILICON SILICON

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