FLK107XV
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
High Output Power: P1dB = 30.0dBm(Typ.)
High Gain: G1dB = 6.5dB(Typ.)
High PAE:
η
add = 31%(Typ.)
Proven Reliability
Drain
Drain
Drain
Drain
DESCRIPTION
The FLK107XV chip is a power GaAs FET that is
designed for general purpose applications in the Ku-Band
frequency range as it provides superior power, gain, and
efficiency.
Eudynas
stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Rating
15
-5
Tc = 25°C
7.50
-65 to +175
175
Unit
V
V
W
°C
°C
Gate
Gate
Gate
Gate
Eudyna
recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Power-added Efficiency
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Channel to Case
VDS = 10V
IDS
≈
0.6IDSS
f = 14.5GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
VDS = 5V, IDS = 20mA
IGS = -20µA
Min.
-
-
-1.0
-5
29
5.5
-
-
Limit
Typ. Max.
400
200
-2.0
-
30
6.5
31
15
600
-
-3.5
-
-
-
-
20
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.3
July 1999
1
FLK107XV
GaAs FET & HEMT Chips
POWER DERATING CURVE
10
Total Power Dissipation (W)
8
6
4
2
400
300
200
100
-2.0V
0
50
100
150
200
2
4
6
8
10
Drain-Source Voltage (V)
VGS =0V
-0.5V
-1.0V
-1.5V
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Case Temperature (°C)
OUTPUT POWER vs. INPUT POWER
Drain Current (mA)
P1dB &
η
add vs. VDS
f = 14.5GHz
IDS
≈0.6I
DSS
Output Power (dBm)
P1dB (dBm)
VDS=10V
30
IDS
≈0.6I
DSS
f = 14.5GHz
28
26
31
Pout
30
29
P1dB
η
add (%)
η
add
24
22
η
add
40
20
28
27
30
20
14
16
18
20
22
24
26
8
9
10
Input Power (dBm)
Drain-Source Voltage (V)
2
η
add (%)
40
FLK107XV
GaAs FET & HEMT Chips
S-PARAMETERS
VDS = 10V, IDS = 240mA
FREQUENCY
(MHZ)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
18500
19000
19500
20000
S11
MAG
.998
.972
.941
.926
.919
.915
.913
.913
.912
.913
.913
.914
.915
.916
.917
.918
.919
.920
.921
.923
.924
.925
.926
.927
.928
.929
.930
.932
.933
.934
.935
.936
.937
.937
.938
.939
.940
.941
.942
.943
.944
S21
ANG
MAG
11.209
9.441
6.826
5.082
3.976
3.236
2.713
2.325
2.026
1.789
1.596
1.436
1.301
1.186
1.086
1.000
.923
.856
.795
.741
.692
.648
.608
.572
.538
.508
.479
.453
.429
.407
.386
.367
.349
.333
.317
.302
.289
.276
.264
.252
.241
S12
ANG
171.6
142.2
118.3
103.5
93.0
84.7
77.6
71.3
65.6
60.2
55.1
50.2
45.5
41.0
36.6
32.3
28.2
24.2
20.3
16.5
12.7
9.1
5.6
2.1
-1.2
-4.5
-7.8
-10.9
-14.0
-17.0
-19.9
-22.8
-25.6
-28.4
-31.1
-33.7
-36.3
-38.8
-41.3
-43.8
-46.2
S22
ANG
82.1
54.8
33.6
21.4
13.5
7.8
3.3
-0.4
-3.6
-6.4
-8.9
-11.3
-13.5
-15.5
-17.4
-19.2
-20.9
-22.5
-24.0
-25.5
-26.8
-28.2
-29.4
-30.6
-31.8
-32.9
-33.9
-34.9
-35.9
-36.8
-37.7
-38.6
-39.4
-40.2
-41.0
-41.7
-42.5
-43.2
-43.8
-44.5
-45.1
MAG
.007
.031
.045
.050
.052
.053
.053
.053
.053
.053
.052
.052
.051
.051
.050
.050
.049
.048
.048
.047
.046
.046
.045
.044
.044
.043
.042
.042
.041
.040
.040
.039
.039
.038
.038
.037
.037
.036
.036
.035
.035
MAG
.214
.227
.246
.263
.282
.302
.324
.346
.370
.394
.418
.441
.465
.487
.509
.530
.551
.570
.589
.607
.624
.640
.655
.669
.683
.696
.708
.720
.731
.741
.751
.760
.769
.777
.785
.793
.800
.806
.813
.819
.824
ANG
-15.0
-64.9
-98.3
-113.5
-121.0
-125.1
-127.7
-129.6
-131.1
-132.6
-134.0
-135.4
-136.8
-138.3
-139.8
-141.2
-142.7
-144.2
-145.7
-147.2
-148.7
-150.1
-151.6
-153.0
-154.4
-155.8
-157.1
-158.5
-159.8
-161.1
-162.3
-163.6
-164.8
-166.0
-167.1
-168.3
-169.4
-170.5
-171.6
-172.7
-173.8
-14.5
-65.3
-105.2
-127.5
-141.3
-150.7
-157.5
-162.9
-167.3
-171.0
-174.2
-177.1
-179.7
177.9
175.6
173.5
171.5
169.6
167.7
165.9
164.2
162.5
160.9
159.3
157.7
156.2
154.7
153.2
151.7
150.3
148.9
147.5
146.1
144.8
143.5
142.1
140.8
139.6
138.3
137.1
135.8
Gate
Drain
NOTE:*
The data includes bonding wires.
n: number of wires
n=4 (0.2mm length, 25µm Dia Au wire)
n=4 (0.2mm length, 25µm Dia Au wire)
Download S-Parameters, click here
3