Datasheet> 器件分类 > 分立半导体> 晶体管> RN1969FE(TPL3)

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RN1969FE(TPL3): 产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR; 产品类别分立半导体晶体管; 文件大小347KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1969FE(TPL3)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN1969FE(TPL3)规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	70
元件数量	2
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN1967FE~RN1969FE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1967FE,RN1968FE,RN1969FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

Complementary to RN2967FE to RN2969FE

Unit: mm

•

Equivalent Circuit and Bias Resistor Values

Type No.

RN1967FE

RN1968FE

R1 (kΩ)

R2 (kΩ)

RN1969FE

JEDEC

JEITA

TOSHIBA

―

2-2N1A

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Weight: 3mg (typ.)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1967FE

Emitter-base voltage

RN1968FE

RN1969FE

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

Rating

Unit

Equivalent Circuit

(top view)

EBO

(Note 1)

stg

100

150

−55

to150

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Total rating

2010-05-20

RN1969FE(TPL3)相似产品对比

	RN1969FE(TPL3)	RN1967FE(TPL3,F)	RN1967FE(TPL3)	RN1968FE(TE85L)	RN1969FE(TPL3,F)
描述	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	RN1968FE(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
是否Rohs认证	不符合	符合	不符合	-	符合
厂商名称	Toshiba(东芝)	-	-	Toshiba(东芝)	Toshiba(东芝)
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	-	0.1 A
最小直流电流增益 (hFE)	70	80	80	-	70
元件数量	2	2	2	-	2
极性/信道类型	NPN	NPN	NPN	-	NPN
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W	-	0.1 W
表面贴装	YES	YES	YES	-	YES
晶体管元件材料	SILICON	SILICON	SILICON	-	SILICON

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