RN1441∼RN1444
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting and Switching Applications
High emitter-base voltage: V
EBO
= 25V (min)
High reverse h
FE
: reverse h
FE
= 150 (typ.) (V
CE
=
−2V,
I
C
=
−4mA)
Low on resistance: R
ON
= 1Ω (typ.) (I
B
= 5mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Unit in mm
Equivalent Circuit
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
20
25
300
200
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Type No.
RN1441
RN1442
RN1443
RN1444
Marking
H
FE
classification
A
KA
LA
NA
CA
B
KB
LB
NB
CB
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN1441∼RN1444
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
RN1441
Input resistor
RN1442
RN1443
RN1444
R1
―
―
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 6V, I
C
= 4mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
Typ.
Max
0.1
0.1
1200
0.1
V
MHz
pF
Unit
μA
μA
―
―
―
―
―
―
―
―
200
―
―
―
―
30
4.8
5.6
10
22
2.2
―
―
―
3.9
7
15.4
1.54
―
―
7.3
13
28.6
2.86
kΩ
Note : h
FE
classification
A: 200∼700
B: 350∼1200
2
2007-11-01
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