Mixer Diode, Ultra High Frequency to C Band, Silicon
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Hewlett Packard Co |
包装说明 | R-PDSO-G3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
二极管元件材料 | SILICON |
二极管类型 | MIXER DIODE |
频带 | ULTRA HIGH FREQUENCY TO C BAND |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e0 |
元件数量 | 2 |
端子数量 | 3 |
最大工作频率 | 5.8 GHz |
最小工作频率 | 0.915 GHz |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
认证状态 | Not Qualified |
表面贴装 | YES |
最小正切信号灵敏度 | 55 dBm |
技术 | SCHOTTKY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子位置 | DUAL |
HSMS-286C-BLK | HSMS-286E-BLK | RNC65H2644BPBSL65 | HSMS-286B-BLK | HSMS-285C-BLK | HSMS-286F-BLK | |
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描述 | Mixer Diode, Ultra High Frequency to C Band, Silicon | Mixer Diode, Ultra High Frequency to C Band, Silicon | Fixed Resistor, Metal Film, 0.25W, 2640000ohm, 300V, 0.1% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED | Mixer Diode, Ultra High Frequency to C Band, Silicon | Mixer Diode, Ultra High Frequency to C Band, Silicon | Mixer Diode, Ultra High Frequency to C Band, Silicon |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | R-PDSO-G3 | R-PDSO-G3 | AXIAL LEADED | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
Reach Compliance Code | unknown | unknow | not_compliant | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
端子数量 | 3 | 3 | 2 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 175 °C | 150 °C | 150 °C | 150 °C |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | Axial | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
表面贴装 | YES | YES | NO | YES | YES | YES |
技术 | SCHOTTKY | SCHOTTKY | METAL FILM | SCHOTTKY | SCHOTTKY | SCHOTTKY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
厂商名称 | Hewlett Packard Co | - | - | Hewlett Packard Co | Hewlett Packard Co | Hewlett Packard Co |
配置 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | - | SINGLE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON |
二极管类型 | MIXER DIODE | MIXER DIODE | - | MIXER DIODE | MIXER DIODE | MIXER DIODE |
频带 | ULTRA HIGH FREQUENCY TO C BAND | ULTRA HIGH FREQUENCY TO C BAND | - | ULTRA HIGH FREQUENCY TO C BAND | ULTRA HIGH FREQUENCY TO C BAND | ULTRA HIGH FREQUENCY TO C BAND |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 2 | 2 | - | 1 | 2 | 2 |
最大工作频率 | 5.8 GHz | 5.8 GHz | - | 5.8 GHz | 5.8 GHz | 5.8 GHz |
最小工作频率 | 0.915 GHz | 0.915 GHz | - | 0.915 GHz | 0.915 GHz | 0.915 GHz |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
最小正切信号灵敏度 | 55 dBm | 55 dBm | - | 55 dBm | 55 dBm | 55 dBm |
端子形式 | GULL WING | GULL WING | - | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | - | DUAL | DUAL | DUAL |
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