Preliminary – Subject to change without notice
MDC0331E – Common-Drain Dual N-channel Trench MOSFET 20V
MDC0331E
Common-Drain Dual N-Channel Trench MOSFET 20V, 6A
General Description
The MDC0331E uses advanced Magnachip’s
MOSFET Technology, which provides low on-
state resistance, high switching performance
and excellent reliability. Low RDS(ON) and low
gate charge operation with gate voltage as low
as 2.5V.
Features
V
DS
= 20V
R
DS(ON)
< 20m @ V
GS
= 4.5V
< 27m @ V
GS
= 2.5V
Built-in G-S protection diode against ESD
Applications
Unidirectional or Bi-directional Load Switch
Lithium-Ion Battery Packs
Portable Battery Protection Module
5(G2)
6(S2)
7(S2)
8(D2)
4(G1)
3(S1)
2(S1)
1(D1)
Absolute Maximum Ratings (Ta = 25 C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(1)
(2)
(3)
o
Symbol
V
DSS
V
GSS
T
C
=25 C
T
A
=25 C**
o
o
Rating
20
±12
±6.0
±80
2.0
-55~150
Unit
V
V
A
A
W
o
I
D
I
DM
P
D
T
J
, T
stg
Junction and Storage Temperature Range
C
Ordering Information
Part Number
MDC0331E
MDC0331E
Temp. Range
MDC0331ET
MDC0331ER
Package
-55~150 C
o
-55~150 C
o
Packing
TSSOP-8
TSSOP-8
Feb 2008 Version 1.0
1
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
MDC0331E – Common-Drain Dual N-channel Trench MOSFET 20V
Electrical Characteristics (Ta =25 C)
Characteristics
Static Characteristics
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON
Resistance
On-State Drain Current
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer
Capacitance
Output Capacitance
Turn-On
Rise Time
Turn-Off Delay Time
Delay Time
Symbol
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
I
D(ON)
g
fs
Q
g
Q
gs
Q
gd
C
iss
C
rss
C
oss
t
d(on)
t
r
t
d(off)
V
GS
= 4V, V
DS
= 10V, I
D
= 3.0A, R
L
=
1.2 , R
G
= 3
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DS
= 16V, I
D
= 6A, V
GS
= 4V
Test Condition
V
DS
= 10V, I
D
= 1A
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
GS
= 4.5V, I
D
= 3.0A
V
GS
= 2.5V, I
D
= 3.0A
V
DS
= 5V, V
GS
= 10V
V
DS
= 10V, I
D
= 3.0A
Min
0.50
-
-
12.00
15.00
-
5.00
-
-
-
-
-
-
-
-
-
-
I
S
= 6A, V
GS
= 0V
-
-
I
F
= 6A, V
GS
= 0V, dl/dt = 50A/µs
-
1000
-
nC
Typ
1.00
-
-
15.00
20.80
-
-
10.0
2.0
6.0
900.0
295.0
170.0
55.0
210.0
300.0
340.0
0.8
400
Max
1.50
10.00
±10
20.00
27.00
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
ns
ns
pF
nC
Unit
V
µA
µA
m
A
S
o
Fall Time
t
f
Drain-Source Body Diode Characteristics
Source-Drain Diode
V
SD
Forward Voltage
Body Diode Reverse
t
rr
Recovery Time
Body Diode Reverse
Q
rr
Recovery Charge
Note :
1. Surface mounted RF4 board with 2oz. Copper. PDSM is based on R
θJA
and the maximum allowed junction temperature of 150°
C.
2. Pulse test: pulse width
≤300us,
duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=175(150)°C.
3. Static characteristics are obtained using <300
µs
pulses, duty cycle 0.5% max.
Feb 2008 Version 1.0
2
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
MDC0331E – Common-Drain Dual N-channel Trench MOSFET 20V
Worldwide Sales Support Locations
U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
E-Mail : americasales@magnachip.com
Chicago Office
2300 Barrington Road, Suite 330
Hoffman Estates, IL 60195 U.S.A
Tel : 1-847-882-0951
Fax :1-847-882-0998
U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-898-8000
Fax : +44 (0) 1784-895-115
E-Mail : europesales@magnachip.com
Japan
Tokyo Office
15F., Imperial Hotel Tower
1-1-1, Uchisaiwai-Cho, Chiyoda-Ku
Tokyo, 100-0011 Japan
Tel : 81-3-3507-5772
Fax : 81-3-3507-5914
E-Mail : japansales@magnachip.com
Osaka Office
3F. Shin-Osaka Mt Bldg. #2
3-5-36 Miyahara Yodogawa-Ku
Osaka, 532-003 Japan
Tel : 81-6-6394-8280
Fax : 81-6-6394-8282
E-Mail : osakasales@magnachip.com
Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
E-Mail : taiwansales@magnachip.com
China
Hong Kong Office
Office 03, 42/F, Office Tower Convention Plaza
1 Harbour Road, Wanchai, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
E-Mail : chinasales@magnachip.com
Shenzhen Office
Room 1803, 18/F
International Chamber of Commerce Tower
Fuhua 3Road, Futian District
ShenZhen, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
Shanghai Office
Ste 1902, 1 Huaihai Rd. (C) 20021
Shanghai, China
Tel : 86-21-6373-5181
Fax : 86-21-6373-6640
Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-3459-3451
Fax : 82-2-3459-3668 ~9
Email : koreasales@magnachip.com
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft,
nuclear power generation, medical appliances, and devices or systems in which malfunction of any
Product can reasonably be expected to result in a personal injury. Seller’s customers using or
selling Seller’s products for use in such applications do so at their own risk and agree to fully
defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Feb 2008 Version 1.0
4
MagnaChip Semiconductor Ltd.
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