SFH640
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection, 300 BV
CEO
FEATURES
• Good CTR linearity with forward current
A
C
NC
i179004
1
2
3
6 B
5 C
4 E
• Low CTR degradation
• Very high collector emitter breakdown voltage,
BV
CER
= 300 V
• Isolation test voltage: 5300 V
RMS
• Low coupling capacitance
• High common mode transient immunity
• Phototransistor optocoupler 6 pin DIP package with base
connection
DESCRIPTION
The SFH 640 is an optocoupler with very high BV
CER
, a
minimum of 300 V. It is intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
SFH640-1
SFH640-2
SFH640-3
SFH640-2X007
SFH640-3X007
SFH640-3X009
Note
For additional information on the available options refer to option information.
REMARKS
CTR 40 % to 80 %, DIP-6
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 63 % to 125 %, SMD-6 (option 7)
CTR 100 % to 200 %, SMD-6 (option 7)
CTR 100 % to 200 %, SMD-6 (option 9)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Surge collector current
Total power dissipation
(1)
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
6.0
60
2.5
100
300
300
7.0
50
100
300
UNIT
V
mA
A
mW
V
V
V
mA
mA
mW
t
p
≤
10 µs
I
FSM
P
diss
V
CE
V
CBO
V
EBO
I
C
t
p
≤
10 ms
I
C
P
diss
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708
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83682
Rev. 1.4, 10-Dec-08
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BV
CEO
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
between emitter and detector
Isolation resistance
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Storage temperature range
Operating temperature range
Soldering temperature
(2)
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
CTI
T
stg
T
amb
T
sld
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
V
ISO
R
IO
R
IO
5300/7500
≥
10
12
≥
10
11
≥
0.4
≥
7
≥
7
175
- 55 to + 150
- 55 to + 100
260
°C
°C
°C
V
RMS
/V
PK
Ω
Ω
mm
mm
mm
(1)
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter breakdown
voltage
Voltage emitter base
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Coupling capacitance
Saturation voltage collector
emitter
Collector emitter leakage
current
I
F
= 10 mA, I
C
= 2 mA
I
F
= 10 mA, I
C
= 3.2 mA
I
F
= 10 mA, I
C
= 5 mA
V
CE
= 200 V, R
BE
= 1 MΩ
SFH640-1
SFH640-2
SFH640-3
C
C
V
CEsat
V
CEsat
V
CEsat
I
CER
0.6
0.25
0.25
0.25
1
0.4
0.4
0.4
100
pF
V
V
V
nA
I
CE
= 1 mA,
R
BE
= 1 MΩ
I
EB
= 10 µA
V
CE
= 10 V, f = 1 MHz
V
CB
= 10 V, f = 1 MHz
V
EB
= 5 V, f = 1 MHz
BV
CER
BV
BEO
C
CE
C
CB
C
EB
R
thja
300
7
7
8
38
250
V
V
pF
pF
pF
K/W
I
F
= 10 mA
I
R
= 10 µA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
V
V
R
I
R
C
O
R
thja
6
0.01
25
750
10
1.1
1.5
V
V
µA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83682
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
709
SFH640
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= 10 mA, V
CE
= 10 V
I
F
= 1 mA, V
CE
= 10 V
Current transfer ratio
I
F
= 10 mA, V
CE
= 10 V
I
F
= 1 mA, V
CE
= 10 V
I
F
= 10 mA, V
CE
= 10 V
I
F
= 1 mA, V
CE
= 10 V
PART
SFH640-1
SFH640-1
SFH640-2
SFH640-2
SFH640-3
SFH640-3
SYMBOL
I
C
/I
F
I
C
/I
F
I
C
/I
F
I
C
/I
F
I
C
/I
F
I
C
/I
F
MIN.
40
13
63
22
100
34
70
45
200
30
125
TYP.
MAX.
80
UNIT
%
%
%
%
%
%
Optocoupler, Phototransistor Output,
with Base Connection, 300 BV
CEO
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Rise time
Turn-off time
Fall time
TEST CONDITION
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
I
C
= 2 mA, R
L
= 100
Ω,
V
CC
= 10 V
SYMBOL
t
on
t
r
t
off
t
f
MIN.
TYP.
5
2.5
6
5.5
MAX.
UNIT
µs
µs
µs
µs
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
100
I
F
R
L
V
CC
I
C
NCTR
60
50
30
47
Ω
10
0
10-4
isfh640_02
80
VCE = 10 V1
normalized to
IF = 10 mA,
NCTR = f (IF)
isfh640_01a
10-3
I
F
/A
10-2
10-1
Fig. 1 - Switching Times Measurement Test Circuit and Waveform
Fig. 3 - Current Transfer Ratio (typ.)
1.2
V
Input pulse
I/
F
1.1
10
%
Output pules
90
%
tr
t
on
isfh640_01b
VF = f (IF, TA)
25 ºC
50 ºC
75 ºC
1.0
t
f
t
off
0.9
10
-1
5
10
0
5
10
1
I
F
5mA 10
2
isfh640_03
Fig. 2 - Switching Times Measurement Test Circuit and Waveform
Fig. 4 - Diode Forward Voltage (typ.)
www.vishay.com
710
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83682
Rev. 1.4, 10-Dec-08
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BV
CEO
Vishay Semiconductors
20
17.5
15
I
CE
/mA
12.5
10
7.5
5
2.5
0
10
-2
isfh640_04
10
-6
ICE = f(VCE, IB)
10
-7
/
B
= 100 µA
/
B
= 80 µA
/
B
= 60 µA
/
B
= 40 µA
/
B
= 20 µA
10
-1
V
CE
/V
10
0
10
2
10
1
P
tot
/mW
10
-8
10
-9
IF = 0, RBE = 1.0 MW,
ICER = f(VCE)
10
-10
10
-11
10
-12
0
isfh640_07
25
50
75 100 125 150 175 200
V
CE
/V
Fig. 5 - Output Characteristics (typ.)
Fig. 8 - Collector-Emitter Leakage Current (typ.)
30
ICE = f(VCE, IF)
25
20
15
10
5
0
10
-2
isfh640_05
100
90
80
/F = 20mA
I
F
/mA
/F = 16mA
/F = 14mA
/F = 12mA
/F = 10mA
10
-1
V
CE
/V
10
0
10
1
10
2
70
60
50
40
30
20
10
0
0
10 20 30 40 50 60 70 80 90 100
T
A
/º C
IF = f (TA)
I
CE
/mA
isfh640_08
Fig. 6 - Output Characteristics (typ.)
Fig. 9 - Permissible Loss Diode
100
90
80
70
C
XX
/pF
60
50
40
30
20
10
0
10
-2
isfh640_06
CEB
f = 1.0 MHz,
ICE = f(VCE)
CCB = f(VCB),
CEB = f(VEB)
P
tot
/mW
400
350
300
250
200
150
100
Transistor
PIOT = f (TA)
CCB
CCE
10
-1
10
0
V
XX
/V
10
1
10
2
50
0
0
isfh640_09
Diode
10 20 30 40 50 60 70 80 90 100
T
A
/º C
Fig. 7 - Transistor Capacitances (typ.)
Fig. 10 - Permissible Power Dissipation
Document Number: 83682
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
711
SFH640
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection, 300 BV
CEO
PACKAGE DIMENSIONS
in inches (millimeters)
3
2
1
Pin one ID
0.248 (6.30)
0.256 (6.50)
4
5
6
ISO method A
0.335 (8.50)
0.343 (8.70)
0.039
(1.00)
min.
0.048
(0.45)
0.300 (7.62)
typ.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
4°
typ.
0.031 (0.80) min.
0.031 (0.80)
0.018 (0.45)
0.022 (0.55)
i178004
18°
0.114 (2.90)
0.130 (3.0)
3° to 9°
0.010 (0.25)
typ.
0.300 to 0.347
(7.62 to
8.81)
0.035 (0.90)
0.100 (2.54) typ.
Option 7
0.300 (7.62)
typ.
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
ref.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.331 (8.4)
min.
0.406 (10.3)
max.
0.0040 (0.102)
0.0098 (0.249)
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
0.012 (0.30) typ.
15° max.
18494
www.vishay.com
712
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83682
Rev. 1.4, 10-Dec-08
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