PHOTOTRANSISTOR, 5.3 kV TRIOS
®
LOW CURRENT INPUT
OPTOCOUPLER
Package Dimensions in Inches (mm)
SFH618A/628A
FEATURES
• Very High CTR at I
F
=1 mA, V
CE
=0.5 V
– SFH618A-2, 63–125%
– SFH618A-3, 100–200%
– SFH618A-4, 160–320%
– SFH618A-5, 250–500%
– SFH628A-2, 63–200%
– SFH628A-3, 100–320%
– SFH628A-4, 160–500%
• Specified Minimum CTR at I
F
=-0.5 mA
– SFH618A, V
CE
=1.5 V:
≥
32% (typical 120%)
– SFH628A, V
CE
=1.5 V:
≥
50% (typical 160%)
• Good CTR Linearity Depending on Forward Current
• Low CTR Degradation
• High Collector-Emitter Voltage, V
CEO
=55 V
• Isolation Test Voltage, 5300 VAC
RMS
• Low Coupling Capacitance
• Field-Effect Stable by TRIOS (TRansparent IOn Shield)
• End-Stackable, 0.100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
VDE 0884 Available with Option 1
SMD Option — See SFH6186/6286 Data Sheet
APPLICATIONS
• Telecom
• Industrial Controls
• Battery Powered Equipment
• Office Machines
DESCRIPTION
The SFH618A/628A feature a high current transfer ratio, low
coupling capacitance and high isolation voltage. These cou-
plers have a GaAs infrared emitting diode emitter, which is
optically coupled to a silicon planar phototransistor detector,
and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Therefore multicouplers can easily be implemented and con-
ventional multicouplers can be replaced.
Creepage and clearance distances of >8 mm are achieved
with option 6. This version complies with IEC 950 (DIN VDE
0805) for reinforced insulation up to an operation voltage of
400 V
RMS
or DC.
2
1
Pin One
I.D.
Anode
1
Cathode
2
SFH618A
4
Collector
3
Emitter
SFH628A
.268 (6.81)
.255 (6.48)
3
4
Anode/
Cathode
1
Cathode/
Anode
2
.305
(7.75)
4
Collector
3
Emitter
.190 (4.83)
.179 (4.55)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.135 (3.43
.115 (2.92
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
3°–9°
1.00 (2.54)
Typ.
10°
Typ.
.012 (.30)
.008 (.20)
Maximum Ratings
Emitter
Reverse Voltage (SFH618A)6 V
DC Forward Current (SFH628A:
±
) 50 mA
Surge Forward Current (t
P
≤
10
µ
s) (SFH628A:
±
)2.5 A
Total Power Dissipation70 mW
Detector
Collector-Emitter Voltage55 V
Emitter-Collector Voltage7 V
Collector Current50 mA
Collector Current (t
P
≤
1 ms)100 mA
Total Power Dissipation150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 745300 VAC
RMS
Creepage
≥
7 mm
Clearance
≥
7 mm
Insulation Thickness between Emitter and Detector
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C
≥
10
11
Ω
Storage Temperature Range–55 to +150
°
C
Ambient Temperature Range–55 to +100
°
C
Junction Temperature100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm)260
°
C
Specifications subject to change.
5–246
Figure 1. Current transfer ratio (typ.)
V
CE
=0.5 V, CTR=f(T
A
)
Figure 2. Current transfer ratio (typ.)
V
CE
=1.5 V, CTR=f(T
A
)
Figure 3. Diode forward voltage
T
A
=25°C, V
F
=f(I
F
)
Figure 4. Diode forward voltage
I
F
=1 mA, V
F
=f(T
A
)
Figure 5. Transistor capacitance
T
A
=25°C, f=1 MHz, C
CE
=f(V
CE
)
Figure 6. Output characteristics
T
A
=25°C,
CE
=f(V
CE
, I
F
)
Figure 7. Permissible forward
current diode
I
F
=f(T
A
)
Figure 8. Permissible power
dissipation
P
TOT
=f(T
A
)
Figure 9. Switching times (typ.)
T
A
=25°C, I
F
=1 mA, V
CC
=5 V
t
on
, t
r
, t
off
, t
f
=f(R
L
)
SFH618A/628A
5–249
微控制器 MCU
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