LTC5535
Precision 600MHz to 7GHz,
RF Detector with
Adjustable Gain and
12MHz Baseband Bandwidth
FEATURES
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DESCRIPTIO
Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Frequency Range: 600MHz to 7GHz*
Wide Input Power Range: –32dBm to 10dBm
External Gain Control
Precision V
OUT
Offset Control
Low Starting Voltage: 200mV for Gain = 2
Wide V
CC
Range of 2.7V to 5.5V
Low Operating Current: 2mA
Available in a Low Profile (1mm) SOT-23 Package
The LTC
®
5535 is an RF power detector for RF applications
operating in the 600MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and output
amplifier are combined in a small ThinSOT
TM
package. The
supply voltage range is optimized for operation from a
single cell lithium-ion or three cell NiMH battery.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin.
The LTC5535 output amplifier gain is set via external
resistors. The initial starting voltage of 200mV can be
precisely adjusted using the V
OS
pin.
The LTC5535 operates with input power levels from
–32dBm to 10dBm. The 12MHz baseband bandwidth is
much higher than that of previous Schottky detector
products.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
APPLICATIO S
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802.11a, 802.11b, 802.11g, 802.15, 802.16
Multimode Mobile Phone Products
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
600MHz to 7GHz RF Power Detector
33pF
RF
INPUT
1
V
OUT
OUTPUT VOLTAGE (mV)
3600
V
CC
= 3.6V
3200 T
A
= 25°C
GAIN = 2
2800 V
OS
= 0V
2400
2000
LTC5535
V
CC
6
RF
IN
100pF
5
R
A
V
OS
V
M
5535 TA01
V
CC
0.1µF
2
GND
V
OUT
1600
1200
V
OS
REFERENCE
3
4
R
B
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 TA02
U
2GHz
600MHz
1GHz
5GHz
6GHz
7GHz
4GHz
5535f
U
U
1
LTC5535
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW
RF
IN
1
GND 2
V
OS
3
6 V
CC
5 V
OUT
4 V
M
V
CC
, V
OUT
, V
M
, V
OS ..............................................
–0.3V to 6V
RF
IN
Voltage ...................................(V
CC
±
1.5V) to 6.5V
RF
IN
Power (RMS) .............................................. 12dBm
I
VOUT
.................................................................... 25mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
LTC5535ES6
S6 PART
MARKING
LBHK
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
T
JMAX
= 125°C,
θ
JA
= 250°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The
●
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= 3.6V, RF Input Signal is Off, R
A
= R
B
= 500Ω, V
OS
= 0V unless
otherwise noted.
PARAMETER
V
CC
Operating Voltage
I
VCC
Operating Current
V
OUT
V
OL
(No RF Input)
V
OUT
Output Current
V
OUT
Bandwidth
V
OUT
Load Capacitance
V
OUT
Slew Rate
V
OUT
Noise
V
OS
Voltage Range
V
OS
Input Current
V
M
Voltage Range
V
M
Input Current
RF
IN
Input Frequency Range
RF
IN
Input Power Range
RF
IN
AC Input Resistance
RF
IN
Input Shunt Capacitance
RF Frequency = 300MHz to 7GHz (Note 5, 6) V
CC
= 2.7V to 6V
F = 1000MHz, Pin = –25dBm
F = 1000MHz, Pin = –25dBm
V
M
= 3.6V
V
OS
= 1V
V
OUT
= 1.75V, V
CC
= 2.7V to 5.5V,
∆V
OUT
< 10mV
C
LOAD
= 33pF, R
LOAD
= 2k, P
IN
= –10dBm (Note 4)
(Note 6)
V
RFIN
= 1V Step, C
LOAD
= 33pF (Note 3)
V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination,
50Ω AC Output Termination
●
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ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
●
TYP
2
MAX
5.5
3.5
250
UNITS
V
mA
mV
mA
MHz
2.7
150
10
180 to 220
20
12
I
VOUT
= 0mA
●
●
33
50
1
0
–0.5
0
–0.5
600 to 7000
–32 to 10
220
0.65
1
0.5
V
CC
-1. 8
0.5
mV
P-P
V
µA
V
µA
MHz
dBm
Ω
pF
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3:
The rise time at V
OUT
is measured between 1.3V and 2.3V.
Note 4:
See Table 1 in Applications Information section.
Note 5:
RF performance is tested at 1800MHz
Note 6:
Guaranteed by design.
2
U
pF
V/µs
5535f
W
U
U
W W
W
LTC5535
TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage
220
GAIN = 2
V
OS
= 0V
215 RF INPUT SIGNAL OFF
SUPPLY CURRENT (mA)
V
OUT
OUTPUT VOLTAGE (mV)
V
OUT
OUTPUT VOLTAGE (mV)
210
T
A
= 85°C
205
200
195
190
2.5
T
A
= 25°C
T
A
= –40°C
3
4.5
4
5
3.5
SUPPLY VOLTAGE (V)
Typical Detector Characteristics,
1000MHz, Gain = 2, V
OS
= 0V
3600
3200
V
CC
= 3.6V
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
T
A
= 25°C
T
A
= –40°C
V
OUT
OUTPUT VOLTAGE (mV)
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
Typical Detector Characteristics,
4000MHz, Gain = 2, V
OS
= 0V
3600
3200
V
CC
= 3.6V
3600
3200
V
OUT
OUTPUT VOLTAGE (mV)
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
T
A
= –40°C
2800
2400
2000
T
A
= 25°C
T
A
= –40°C
V
OUT
OUTPUT VOLTAGE (mV)
T
A
= 25°C
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G07
U W
5.5
5535 G01
(R
LOAD
= 1k = R
A
+ R
B
)
Typical Detector Characteristics,
600MHz, Gain = 2, V
OS
= 0V
3600
3200
2800
2400
2000
T
A
= 25°C
T
A
= –40°C
V
CC
= 3.6V
Supply Current vs Supply Voltage
2.8
2.6
2.4
T
A
= 25°C
2.2
2.0
1.8
1.6
2.5
RF INPUT SIGNAL OFF
T
A
= 85°C
1600
1200
800
400
T
A
= –40°C
T
A
= 85°C
6
3
4.5
4
5
3.5
SUPPLY VOLTAGE (V)
5.5
6
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G03
5535 G02
Typical Detector Characteristics,
2000MHz, Gain = 2, V
OS
= 0V
V
CC
= 3.6V
3600
3200
2800
2400
2000
T
A
= –40°C
Typical Detector Characteristics,
3000MHz, Gain = 2, V
OS
= 0V
V
CC
= 3.6V
T
A
= –40°C
T
A
= 25°C
T
A
= 25°C
1600
1200
800
400
T
A
= 85°C
1600
1200
800
400
T
A
= 85°C
T
A
= 85°C
8 12
5535 G04
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G05
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G06
Typical Detector Characteristics,
5000MHz, Gain = 2, V
OS
= 0V
V
CC
= 3.6V
3600
3200
2800
2400
2000
Typical Detector Characteristics,
6000MHz, Gain = 2, V
OS
= 0V
V
CC
= 3.6V
T
A
= –40°C
1600
1200
800
400
1600
1200
800
400
T
A
= 25°C
T
A
= 85°C
T
A
= 85°C
T
A
= 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G08
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5535 G09
5535f
3
LTC5535
TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics,
7000MHz, Gain = 2, V
OS
= 0V
3600
3200
V
OUT
OUTPUT VOLTAGE (mV)
V
CC
= 3.6V
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
T
A
= 25°C
T
A
= –40°C
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
V
OUT
vs RF Input Power and V
OS
,
2000MHz, Gain = 2
3600
V
CC
= 3.6V
3200 T
A
= 25°C
4000
3600
V
OUT
OUTPUT VOLTAGE (mV)
3200
2800
2400
2000
V
OS
= 1V
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
V
OS
= 0.5V
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
Time Domain Response at
f
RF
= 1900MHz, P
RF
= 0dBm
ASK
MODULATION
SIGNAL
500mV/DIV
ASK
MODULATION
SIGNAL
100mV/DIV
OUTPUT
200mV/DIV
OUTPUT
500mV/DIV
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
4
U W
(R
LOAD
= 1k = R
A
+ R
B
)
V
OUT
vs RF Input Power and V
CC
,
2000MHz, Gain = 2, V
OS
= 0V,
T
A
= 25°C
T
A
= 85°C
8 12
5535 G10
5200
4800
V
CC
= 5V
4400
V
CC
= 6V
4000
V
CC
= 4V
3600
3200
V
CC
= 3V
2800
2400
2000
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8 12
RF INPUT POWER (dBm)
5535 G11
Typical Detector Characteristics,
2000MHz, Gain = 4, V
OS
= 0V
V
CC
= 3.6V
T
A
= –40°C
T
A
= 25°C
1600
1200
800
400
T
A
= 85°C
V
OS
= 0V
8 12
5535 G12
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
5535 G13
Time Domain Response at
f
RF
= 1900MHz, P
RF
= –10dBm
100ns/DIV
5535 G14
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
100ns/DIV
5535 G15
5535f
LTC5535
TYPICAL PERFOR A CE CHARACTERISTICS
V
OUT
Slope vs RF Input Power
at 600MHz
1000
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
V
OUT
SLOPE (mV/dB)
100
100
V
OUT
SLOPE (mV/dB)
V
OUT
SLOPE (mV/dB)
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
V
OUT
Slope vs RF Input Power
at 3000MHz
1000
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
V
OUT
SLOPE (mV/dB)
V
OUT
SLOPE (mV/dB)
100
100
V
OUT
SLOPE (mV/dB)
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
V
OUT
Slope vs RF Input Power
at 6000MHz
1000
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
1000
V
OUT
SLOPE (mV/dB)
100
V
OUT
SLOPE (mV/dB)
10
T
A
= –40°C
T
A
= 85°C
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
U W
5
5535 G16
(R
LOAD
= 1k = R
A
+ R
B
)
V
OUT
Slope vs RF Input Power
at 2000MHz
1000
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
V
OUT
Slope vs RF Input Power
at 1000MHz
1000
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
100
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
10
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
10
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
10
5535 G17
5535 G18
V
OUT
Slope vs RF Input Power
at 4000MHz
1000
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
1000
V
OUT
Slope vs RF Input Power
at 5000MHz
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
100
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
5
10
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
10
0
–30 –25 –20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
10
5535 G19
5535 G20
5535 G21
V
OUT
Slope vs RF Input Power
at 7000MHz
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
100
T
A
= 25°C
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
5
10
0
0
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
5
10
5535 G22
5535 G23
5535f
5
Microchip MCU
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