DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N4148; 1N4448
High-speed diodes
Product data sheet
Supersedes data of 2002 Jan 23
2004 Aug 10
NXP Semiconductors
Product data sheet
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass SOD27 (DO-35)
package
•
High switching speed: max. 4 ns
•
General application
•
Continuous reverse voltage: max. 100 V
•
Repetitive peak reverse voltage: max. 100 V
•
Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•
High-speed switching.
DESCRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in
hermetically sealed leaded glass SOD27 (DO-35)
packages.
MARKING
TYPE NUMBER
1N4148
1N4448
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
1N4148
1N4448
−
DESCRIPTION
The diodes are type branded.
handbook, halfpage
k
1N4148; 1N4448
a
MAM246
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
MARKING CODE
1N4148PH or 4148PH
1N4448
VERSION
SOD27
hermetically sealed glass package; axial leaded; 2 leads
2004 Aug 10
2
NXP Semiconductors
Product data sheet
High-speed diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
1N4148
1N4448
I
R
I
R
C
d
t
rr
reverse current
reverse current; 1N4448
diode capacitance
reverse recovery time
PARAMETER
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 5 mA
I
F
= 100 mA
V
R
= 20 V; see Fig.5
V
R
= 20 V; T
j
= 150
°C;
see Fig.5
V
R
= 20 V; T
j
= 100
°C;
see Fig.5
f = 1 MHz; V
R
= 0 V; see Fig.6
−
−
−
−
CONDITIONS
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
see Fig.2; note 1
CONDITIONS
−
−
−
−
1N4148; 1N4448
MIN.
MAX.
100
100
200
450
V
V
UNIT
mA
mA
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
−65
−
MIN.
1
MAX.
V
V
V
UNIT
0.62
−
0.72
1
25
50
3
4
4
nA
µA
µA
pF
ns
when switched from I
F
= 10 mA to
−
I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
=
20 ns; see Fig.8
−
V
fr
forward recovery voltage
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on a printed-circuit board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
350
UNIT
K/W
K/W
2004 Aug 10
3
NXP Semiconductors
Product data sheet
High-speed diodes
GRAPHICAL DATA
1N4148; 1N4448
300
I
F
(mA)
200
mbg451
handbook, halfpage
600
MBG464
IF
(mA)
400
(1)
(2)
(3)
100
200
0
0
100
T
amb
(°C)
200
0
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Aug 10
4
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
10
3
I
R
(µA)
10
2
mgd290
MGD004
handbook, halfpage
1.2
Cd
(pF)
1.0
(1)
(2)
10
0.8
1
10
−
1
0.6
10
−
2
0
100
T
j
(°C)
200
0.4
0
10
VR (V)
20
(1) V
R
= 75 V; typical values.
(2) V
R
= 20 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
2004 Aug 10
5
测试/测量
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